MMBT4403T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary NPN Type Available (MMBT4401T) C Dim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22 C TOP VIEW B Gree Device (Note 3 and 4) B 0.75 0.85 0.80 B E C 1.45 1.75 1.60 Mechanical Data G D 0.50 H Case: SOT-523 G 0.90 1.10 1.00 Case Material: Molded Plastic. UL Flammability K N Classification Rating 94V-0 M H 1.50 1.70 1.60 Moisture Sensitivity: Level 1 per J-STD-020C J 0.00 0.10 0.05 Terminals: Solderable per MIL-STD-202, Method 208 J D L Lead Free Plating (Matte Tin Finish annealed over K 0.60 0.80 0.75 Alloy 42 leadframe). C L 0.10 0.30 0.22 Terminal Connections: See Diagram Marking Information: 2T, See Page 4 M 0.10 0.20 0.12 Ordering & Date Code Information: See Page 4 N 0.45 0.65 0.50 Weight: 0.002 grams (approximate) 0 8 B E All Dimensions in mm Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -40 V V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current Continuous (Note 1) I -600 mA C Power Dissipation (Note 1) P 150 mW d Thermal Resistance, Junction to Ambient (Note 1) 833 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage -40 V V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -40 V V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -5.0 V V I = -100A, I = 0 (BR)EBO E C Collector Cutoff Current I -100 nA V = -35V, V = -0.4V CEX CE EB(OFF) Base Cutoff Current I -100 nA V = -35V, V = -0.4V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = -100A, V = -1.0V C CE 30 I = -1.0mA, V = -1.0V 60 C CE DC Current Gain 100 h I = -10mA, V = -1.0V FE C CE 100 300 I = -150mA, V = -2.0V C CE 20 I = -500mA, V = -2.0V C CE -0.40 I = -150mA, I = -15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.75 I = -500mA, I = -50mA C B -0.75 -0.95 I = -150mA, I = -15mA C B Base-Emitter Saturation Voltage V V BE(SAT) -1.30 I = -500mA, I = -50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8.5 pF V = -10V, f = 1.0MHz, I = 0 cb CB E Input Capacitance C 30 pF V = -0.5V, f = 1.0MHz, I = 0 eb EB C Input Impedance 1.5 15 h k ie -4 Voltage Feedback Ratio 0.1 8.0 x 10 h re V = -10V, I = -1.0mA, CE C f = 1.0kHz Small Signal Current Gain 60 500 h fe Output Admittance h 1.0 100 S oe V = -10V, I = -20mA, CE C Current Gain-Bandwidth Product 200 MHz f T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 15 ns d V = -30V, I = -150mA, CC C V = -2.0V, I = -15mA Rise Time 20 ns BE(off) B1 t r Storage Time 225 ns t s V = -30V, I = -150mA, CC C I = I = -15mA Fall Time 30 ns B1 B2 t f Notes: 5. Short duration pulse test used to minimize self-heating effect. 200 40 Note 1 30 150 20 Cibo 10 100 5.0 50 Cobo 1.0 0 40 80 120 160 200 -0.1 -1.0 -30 0 -10 T , AMBIENT TEMPERATURE (C) REVERSE VOLTS (V) A Fig. 2 Capacitances (Typical) Fig. 1 Power Derating Curve, Total Package MMBT4403T DS30273 Rev. 8 - 2 2 of 4 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) d CAPACITANCE (pF)