X-On Electronics has gained recognition as a prominent supplier of MMBT5551-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5551-7-F Diodes Incorporated

MMBT5551-7-F electronic component of Diodes Incorporated
MMBT5551-7-F Diodes Incorporated
MMBT5551-7-F Bipolar Transistors - BJT
MMBT5551-7-F  Semiconductors

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See Product Specifications
Part No. MMBT5551-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS NPN 300mW
Datasheet: MMBT5551-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0312 ea
Line Total: USD 93.6 
Availability - 5837460
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
6527130
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0312
6000 : USD 0.0309
9000 : USD 0.0286
15000 : USD 0.0195
21000 : USD 0.0157
30000 : USD 0.015

2808
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 2660
Multiples : 1
2660 : USD 0.0489
3000 : USD 0.0315

28130
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 20
Multiples : 20
20 : USD 0.0422
200 : USD 0.0343
600 : USD 0.0256
3000 : USD 0.021
9000 : USD 0.0195
21000 : USD 0.0184

93525
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.19
10 : USD 0.1188
100 : USD 0.0737
500 : USD 0.0495
1000 : USD 0.0363
3000 : USD 0.0319
6000 : USD 0.0286
9000 : USD 0.022

2910
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.224
5 : USD 0.168
10 : USD 0.1414
50 : USD 0.0868
100 : USD 0.07

2910
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 2660
Multiples : 1
2660 : USD 0.0489

5837460
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0312
6000 : USD 0.0309
9000 : USD 0.0286
15000 : USD 0.0195
21000 : USD 0.0157
30000 : USD 0.015

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the MMBT5551-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBT5551-7-F is a transistors bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is a NPN 300mW surface mount (SMD) device, specifically designed for use in a wide range of applications. The device features a low leakage current, high gain, and high output current, as well as respectable high speed switching and good thermal stability. It is also noted for its low power consumption and its ability to be used in a wide range of temperature ranges (-65°C to +150°C). This device can be used for various power applications, allowing users with different power requirements to use a single device for their applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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DIODES INC
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DiodesZetex
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PER
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