X-On Electronics has gained recognition as a prominent supplier of MMBT6427-7 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. MMBT6427-7 Darlington Transistors are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

MMBT6427-7 Diodes Incorporated

MMBT6427-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMBT6427-7
Manufacturer: Diodes Incorporated
Category: Darlington Transistors
Description: Darlington Transistors 40V 300mW
Datasheet: MMBT6427-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5674 ea
Line Total: USD 0.57 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5674

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT6427-7 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT6427-7 and other electronic components in the Darlington Transistors category and beyond.

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MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction A SOT-23 Ideal for Low Power Amplification and Switching C Dim Min Max High Current Gain A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 Gree Device (Notes 1 and 4) TOP VIEW B E C 2.30 2.50 D D 0.89 1.03 Mechanical Data E G E 0.45 0.60 Case: SOT-23 H G 1.78 2.05 Case Material: Molded Plastic. UL Flammability H 2.80 3.00 K M Classification Rating 94V-0 J 0.013 0.10 J Moisture Sensitivity: Level 1 per J-STD-020D K 0.903 1.10 L Terminals: Solderable per MIL-STD-202, Method 208 L 0.45 0.61 C Lead Free Plating (Matte Tin Finish annealed over Alloy M 0.085 0.180 42 leadframe). 0 8 Terminal Connections: See Diagram All Dimensions in mm Marking (See Page 3): K1D Ordering & Date Code Information: See Page 3 B E Weight: 0.008 grams (approximate) Maximum Ratings @T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 12 V EBO Collector Current - Continuous I 500 mA C Thermal Characteristics Characteristic Symbol Value Unit 300 mW Power Dissipation (Note 2) @ T = 25C P A D Thermal Resistance, Junction to Ambient (Note 2)@ T = 25C R 417 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics @T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage 40 V V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 40 V V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 12 V I = 10A, I = 0 (BR)EBO E C Collector Cutoff Current I 50 nA V = 30V, I = 0 CBO CB E Collector Cutoff Current I 1.0 A V = 25V, I = 0 CEO CE B Emitter Cutoff Current I 50 nA V = 10V, I = 0 EBO EB C ON CHARACTERISTICS (Note 3) I = 10mA, V = 5.0V 10,000 100,000 C CE DC Current Gain 20,000 200,000 h I = 100mA, V = 5.0V FE C CE 14,000 140,000 I = 500mA, V = 5.0V C CE 1.2 I = 50mA, I = 0.5mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 1.5 I = 500mA, I = 0.5mA C B Base-Emitter Saturation Voltage V 2.0 V I = 500mA, I = 0.5mA BE(SAT) C B Base-Emitter On Voltage V 1.75 V I = 50mA, V =5.0V BE(ON) C CE SMALL SIGNAL CHARACTERISTICS Output Capacitance 8.0 Typical pF C V = 10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 15 Typical pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 400 1.10 1.05 350 1.00 0.95 300 0.90 250 0.85 0.80 200 0.75 0.70 150 0.65 0.60 100 0.55 0.50 50 0.45 0 0.40 200 0 25 50 75 100 125 150 175 1000 1 10 100 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (C) C A Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current Fig. 1, Max Power Dissipation vs Ambient Temperature 1,000,000 1.6 1.5 1.4 1.3 100,000 1.2 1.1 1.0 10,000 0.9 0.8 0.7 0.6 1,000 0.5 0.4 0.3 0.2 100 0.1 1 10 100 10 1 100 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4, Base Emitter Voltage vs. Collector Current Fig. 3, DC Current Gain vs Collector Current 1000 100 10 1 110 100 I , COLLECTOR CURRENT (mA) C Fig. 5, Gain Bandwidth Product vs Collector Current MMBT6427 DS30048 Rev. 9 - 2 2 of 3 Diodes Incorporated www.diodes.com h , DC CURRENT GAIN FE P , POWER DISSIPATION (mW) D f , GAIN BANDWIDTH PRODUCT (MHz) T V , COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V) V , BASE EMITTER VOLTAGE (V) BE(ON)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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