MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction A SOT-23 Complementary PNP Types Available (MMBTA63 C Dim Min Max /MMBTA64) A 0.37 0.51 Ideal for Medium Power Amplification and Switching B C High Current Gain B 1.20 1.40 TOP VIEW BE Lead, Halogen and Antimony Free, RoHS Compliant C 2.30 2.50 DGree Device (Notes 3 and 4) E G D 0.89 1.03 Qualified to AEC-Q101 Standards for High Reliability H E 0.45 0.60 Mechanical Data K G 1.78 2.05 M H 2.80 3.00 J Case: SOT-23 L Case Material: Molded Plastic. UL Flammability J 0.013 0.10 Classification Rating 94V-0 K 0.903 1.10 Moisture Sensitivity: Level 1 per J-STD-020D C L 0.45 0.61 Terminal Connections: See Diagram M 0.085 0.180 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 0 8 42 leadframe). All Dimensions in mm MMBTA13 Marking (See Page 3): K2D, K3D B E MMBTA14 Marking (See Page 3): K3D Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 30 V V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 10 V EBO Collector Current - Continuous I 300 mA C Power Dissipation (Note 1) P 300 mW D Thermal Resistance, Junction to Ambient (Note 1) R 417 CW JA Operating and Storage and Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage V 30 V I = 100A V = 0V (BR)CEO C BE Collector Cutoff Current I 100 nA V = 30V, I = 0 CBO CB E Emitter Cutoff Current 100 nA I V = 10V, I = 0 EBO EB C ON CHARACTERISTICS (Note 2) I = 10mA, V = 5.0V C CE DC Current Gain MMBTA13 5,000 MMBTA14 10,000 I = 10mA, V = 5.0V C CE h FE MMBTA13 10,000 I = 100mA, V = 5.0V C CE MMBTA14 20,000 I = 100mA, V = 5.0V C CE Collector-Emitter Saturation Voltage V 1.5 V I = 100mA, I = 100A CE(SAT) C B Base-Emitter Saturation Voltage V 2.0 V I = 100mA, V = 5.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS Output Capacitance 8.0 Typical pF C V = 10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 15 Typical pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C Current Gain-Bandwidth Product f 125 MHz V = 5.0V, I = 10mA, f = 100MHz T CE C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 400 1.10 1.05 350 1.00 0.95 300 0.90 0.85 250 0.80 200 0.75 0.70 150 0.65 0.60 100 0.55 0.50 50 0.45 0.40 0 0 25 50 150 175 200 75 100 125 1 10 100 1000 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (C) C A Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current Fig. 1, Max Power Dissipation vs Ambient Temperature 1,000,000 1.6 1.5 1.4 1.3 100,000 1.2 1.1 1.0 0.9 10,000 0.8 0.7 0.6 1,000 0.5 0.4 0.3 0.2 100 0.1 1 100 10 10 1 100 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4, Base Emitter Voltage vs. Collector Current Fig. 3, DC Current Gain vs Collector Current 1000 100 10 1 110 100 I , COLLECTOR CURRENT (mA) C Fig. 5, Gain Bandwidth Product vs Collector Current MMBTA13 / MMBTA14 DS30047 Rev. 11 - 2 2 of 3 Diodes Incorporated www.diodes.com h, DC CURRENT GAIN FE P , POWER DISSIPATION (mW) f, GAIN BANDWIDTH PRODUCT (MHz) D T V, COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V) V , BASE EMITTER VOLTAGE (V) BE(ON)