X-On Electronics has gained recognition as a prominent supplier of MMBTA92-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTA92-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBTA92-7-F Diodes Incorporated

Hot MMBTA92-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMBTA92-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: transistors (npn/pnp) pnp 500ma 300v sot-23 (sot-23-3) rohs
Datasheet: MMBTA92-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0382 ea
Line Total: USD 0.76

Availability - 3999
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
6790
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 5952
Multiples : 1
5952 : USD 0.0218

767
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 713
Multiples : 1
713 : USD 0.1823

11640
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0235

375390
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0212
9000 : USD 0.0212
15000 : USD 0.0212
60000 : USD 0.0212
90000 : USD 0.0212

3999
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 20
Multiples : 20
20 : USD 0.0382
200 : USD 0.0301
600 : USD 0.0255
3000 : USD 0.0229
9000 : USD 0.0205
21000 : USD 0.0193

208751
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.1725
10 : USD 0.1046
100 : USD 0.0426
1000 : USD 0.0333
3000 : USD 0.0242

387
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 0.169
10 : USD 0.1144
25 : USD 0.0871
50 : USD 0.0715
100 : USD 0.0585

157140
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.022

29100
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.022

2910
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0224

767
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 713
Multiples : 1
713 : USD 0.1823

11640
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0235

6790
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 5263
Multiples : 1
5263 : USD 0.0218

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
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We are delighted to provide the MMBTA92-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTA92-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBTA92 300V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BV > 300V Case: SOT-23 CEO Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound Complementary NPN Type: MMBTA42 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Finish-Matte Tin Plated Leads Solderable per MIL- Qualified to AEC-Q101 Standards for High Reliability STD-202, Method 208 PPAP Capable (Note 4) Weight: 0.008 grams (Approximate) SOT23 C E B C B E Top View Top View Device Symbol Pin-Out Symbolhematic Symbolhematic Ordering Information (Notes 4 & 5) Part Number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MMBTA92-7-F AEC-Q101 K3R 7 8 3,000 MMBTA92-13-F AEC-Q101 K3R 13 8 10,000 MMBTA92Q-7-F Automotive K3R 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMBTA92 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -300 V VCBO Collector-Emitter Voltage -300 V V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current -500 mA I C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 300 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 417 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage BV -300 V I = -100A, I = 0 CBO C E Collector-Emitter Breakdown Voltage -300 V BV I = -1.0mA, I = 0 CEO C B Emitter-Base Breakdown Voltage -5.0 V BV I = -100A, I = 0 EBO E C Collector Cut-Off Current -250 nA I V = -200V, I = 0 CBO CB E Emitter Cut-Off Current -100 nA I V = -3.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 7) I = -1.0mA, V = -10V 25 C CE DC Current Gain h 40 I = -10mA, V = -10V FE C CE 25 I = -30mA, V = -10V C CE Collector-Emitter Saturation Voltage -0.5 V V I = -20mA, I = -2.0mA CE(SAT) C B Base-Emitter Saturation Voltage V -0.9 V I = -20mA, I = -2.0mA BE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 6.0 pF C V = -20V, f = 1.0MHz, I = 0 obo CB E V = -20V, I = -10mA, CE C Current Gain-Bandwidth Product 50 MHz f T f = 100MHz Note: 7. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 MMBTA92 May 2015 Diodes Incorporated www.diodes.com Document number: DS30060 Rev. 12 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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