MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators SOT-23 C High Current Gain Bandwidth Product Dim Min Max Ideal for Mixer and RF Amplifier Applications with A 0.37 0.51 collector currents in the 100A - 30 mA Range B E Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 Gree Device (Notes 3 and 4) C 2.30 2.50 Mechanical Data D 0.89 1.03 E 0.45 0.60 Case: SOT-23 Case Material: Molded Plastic. UL Flammability G 1.78 2.05 Classification Rating 94V-0 H 2.80 3.00 Moisture Sensitivity: Level 1 per J-STD-020C J 0.013 0.10 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram K 0.903 1.10 Lead Free Plating (Matte Tin Finish annealed over L 0.45 0.61 Alloy 42 leadframe). M 0.085 0.180 Marking Information: See Page 3 Ordering Information: See Page 3 0 8 Weight: 0.008 grams (approximate) All Dimensions in mm Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 40 V V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 4.0 V EBO Collector Current - Continuous (Note 1) 50 mA I C Power Dissipation (Note 1) P 300 mW d Thermal Resistance, Junction to Ambient (Note 1) 417 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage 40 V V I = 1mA, I = 0 (BR)CEO C B Collector-Base Breakdown Voltage V 40 V I = 100A, I = 0 (BR)CBO C E Emitter-Base Breakdown Voltage 4.0 V V I = 10A, I = 0 (BR)EBO E C Collector Cutoff Current I 100 nA V = 30V, I = 0 CBO CB E Emitter Cutoff Current 100 nA I V = 2V, I = 0 EBO EB C ON CHARACTERISTICS (Note 2) DC Current Gain h 30 I = 8mA, V = 10.0V FE C CE Collector-Emitter Saturation Voltage 0.5 V V I = 4mA, I = 400A CE(SAT) C B Base-Emitter On Voltage V 0.95 V I = 4mA, V = 10.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product f 400 MHz V = 10V, f = 100MHz, I = 8mA T CE C Collector-Base Capacitance 0.7 pF C V = 10V, f = 1.0MHz, I = 0 CB CB E Collector-Base Feedback Capacitance C 0.65 pF V = 10V, f = 1.0MHz, I = 0 RB CB E Collector-Base Time Constant RbCc 9 ps I = 4mA, V = 10V, f = 31.8MHz C CB Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout, as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at DS31034 Rev. 13 - 2 2 of 3 MMBTH24 Diodes Incorporated www.diodes.com