X-On Electronics has gained recognition as a prominent supplier of MMDT2222V-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMDT2222V-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMDT2222V-7 Diodes Incorporated

Hot MMDT2222V-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMDT2222V-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN BIPOLAR
Datasheet: MMDT2222V-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0853 ea
Line Total: USD 255.9

Availability - 1193100
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2545
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1416
50 : USD 0.1223
150 : USD 0.1141
500 : USD 0.1037
3000 : USD 0.0991
6000 : USD 0.0963

4097
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4945
10 : USD 0.3438
100 : USD 0.1564
1000 : USD 0.1219
3000 : USD 0.1035
9000 : USD 0.0943
24000 : USD 0.0874
45000 : USD 0.0863

242
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 250
Multiples : 1
250 : USD 0.0862

1193100
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.0853

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMDT2222V-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDT2222V-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMDT2222V 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BV > 40V Case: SOT563 CEO Case Material: Molded Plastic, Green Molding Compound Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals: Finish Matte Tin Finish. Solderable per MIL-STD- Complementary PNP Type: MMDT2907V 202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.003 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT563 Device Schematic Bottom View Top View Top View Ordering Information (Note 4) Product Status Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MMDT2222V-7 Active AEC-Q101 KAT 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMDT2222V Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 75 V VCBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage 6.0 V V EBO Collector Current 600 mA I C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 150 mW D Thermal Resistance, Junction to Ambient (Note 5) R 833 C/W JA Operating and Storage and Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristic and Derating Information 2 of 6 MMDT2222V February 2016 Diodes Incorporated www.diodes.com Document number: DS30563 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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