MMDT2227M Lead-free Green COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Complementary Pair SOT-26 C B E 2 1 1 Epitaxial Planar Die Construction Dim Min Max Typ One 2222A Type (NPN), B C A One 2907A Type (PNP) 0.35 0.50 0.38 Ideal for Low Power Amplification and Switching B 1.50 1.70 1.60 E B C 2 2 1 Lead Free By Design/RoHS Compliant (Note 2) C 2.70 3.00 2.80 Green Devic (Note 3) H D 0.95 F 0.55 K M H 2.90 3.10 3.00 Mechanical Data J 0.013 0.10 0.05 J D F L K 1.00 1.30 1.10 Case: SOT-26 Case Material: Molded Plastic, Green Molding L 0.35 0.55 0.40 Compound. UL Flammability Classification Rating 94V-0 M 0.10 0.20 0.15 Note: E1, B1, and C1 = 2907A Type (PNP), Moisture Sensitivity: Level 1 per J-STD-020C E2, B2, and C2 = 2222A Type (NPN). 0 8 Terminals: Finish - Matte Tin annealed over Copper Type marking indicates orientation. All Dimensions in mm leadframe. Solderable per MIL-STD-202, Method 208 C B E Terminal Connections: See Diagram 2 1 1 Ordering & Date Code Information: See Page 3 Marking (See Page 3): K27 Weight: 0.006 grams (approximate) E B C 2 2 1 T = 25C unless otherwise specified A Maximum Ratings, 2222A Type (NPN) Characteristic Symbol 2222A (NPN) Unit Collector-Base Voltage V 75 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V EBO 6.0 V I Collector Current - Continuous C 600 mA T = 25C unless otherwise specified A Maximum Ratings, 2907A Type (PNP) Characteristic Symbol 2907A (PNP) Unit Collector-Base Voltage V CBO -60 V Collector-Emitter Voltage V CEO -60 V V Emitter-Base Voltage EBO -5.0 V Collector Current - Continuous I -600 mA C T = 25C unless otherwise specified Maximum Ratings, Total A Characteristic Symbol Value Unit P mW Total Power Dissipation (Note 1) d 300 Thermal Resistance, Junction to Ambient (Note 1) R 417 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at T = 25C unless otherwise specified A Electrical Characteristics, 2222A Type (NPN) Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V 75 V I = 10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V I = 10mA, I = 0 (BR)CEO 40 V C B V I = 10A, I = 0 Emitter-Base Breakdown Voltage (BR)EBO 6.0 V E C V = 60V, I = 0 nA CB E I Collector Cutoff Current CBO 10 A V = 60V, I = 0, T = 150C CB E A V = 60V, V = 3.0V Collector Cutoff Current I 10 nA CE EB(OFF) CEX Emitter Cutoff Current I 10 nA V = 3.0V, I = 0 EBO EB C Base Cutoff Current I V = 60V, V = 3.0V BL 20 nA CE EB(OFF) ON CHARACTERISTICS (Note 4) 35 I = 100A, V = 10V C CE 50 I = 1.0mA, V = 10V C CE 75 I = 10mA, V = 10V C CE DC Current Gain h 100 300 I = 150mA, V = 10V FE C CE 40 I = 500mA, V = 10V C CE 50 I = 10mA, V = 10V, T = -55C C CE A 35 I = 150mA, V = 1.0V C CE 0.3 I = 150mA, I = 15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 1.0 I = 500mA, I = 50mA C B I = 150mA, I = 15mA 0.6 1.2 C B Base-Emitter Saturation Voltage V BE(SAT) V I = 500mA, I = 50mA 2.0 C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8 pF V = 10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 25 pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C V = 20V, I = 20mA, CE C Current Gain-Bandwidth Product f 300 MHz T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 10 ns d V = 30V, I = 150mA, CC C V = - 0.5V, I = 15mA BE(off) B1 Rise Time t 25 ns r Storage Time t s 225 ns V = 30V, I = 150mA, CC C I = I = 15mA B1 B2 Fall Time t f 60 ns Note: 4. Pulse test: Pulse width 300s, duty cycle 2%. DS30718 Rev. 4 - 2 2 of 4 MMDT2227M www.diodes.com