MMDT3904V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Ideal for Low Power Amplification and Switching C B E 1 2 2 Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) B C B 1.10 1.25 1.20 Gree Device (Note 4 and 5) C 1.55 1.70 1.60 E B C 1 1 2 Mechanical Data D D 0.50 Case: SOT-563 G G 0.90 1.10 1.00 Case Material: Molded Plastic. UL Flammability H 1.50 1.70 1.60 Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C M K 0.56 0.60 0.60 K Terminals: Finish - Matte Tin annealed over Alloy 42 L 0.10 0.30 0.20 leadframe. Solderable per MIL-STD-202, Method 208 H M 0.10 0.18 0.11 Terminal Connections: See Diagram L Terminals: Lead bearing terminal plating available. See See Note 1 All Dimensions in mm Ordering information Page 3 C B E Marking Information: KAP, See Page 3 1 2 2 Ordering Information: See Page 3 Weight: 0.003 grams (approximate) E B C 1 1 2 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current - Continuous I 200 mA C Power Dissipation (Note 2) 200 mW P d Thermal Resistance, Junction to Ambient R 625 C/W JA Operating and Storage Temperature Range -55 to +150 C T , T j STG Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V 60 V I = 10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 40 V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 5.0 V V I = 10A, I = 0 (BR)EBO E C Collector Cutoff Current 50 nA I V = 30V, V = 3.0V CEX CE EB(OFF) Base Cutoff Current 50 nA I V = 30V, V = 3.0V BL CE EB(OFF) ON CHARACTERISTICS (Note 6) I = 100A, V = 1.0V C CE 40 I = 1.0mA, V = 1.0V 70 C CE DC Current Gain 100 300 h I = 10mA, V = 1.0V FE C CE 60 I = 50mA, V = 1.0V C CE 30 I = 100mA, V = 1.0V C CE I = 10mA, I = 1.0mA 0.20 C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.30 I = 50mA, I = 5.0mA C B 0.65 0.85 I = 10mA, I = 1.0mA C B Base-Emitter Saturation Voltage V V BE(SAT) 0.95 I = 50mA, I = 5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 4.0 pF V = 5.0V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 8.0 pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C Input Impedance h 1.0 10 k ie -4 Voltage Feedback Ratio h 0.5 8.0 x 10 re V = 10V, I = 1.0mA, CE C f = 1.0kHz Small Signal Current Gain 100 400 h fe Output Admittance 1.0 40 h S oe V = 20V, I = 10mA, CE C Current Gain-Bandwidth Product 300 MHz f T f = 100MHz V = 5.0V, I = 100A, CE C Noise Figure NF 5.0 dB R = 1.0k, f = 1.0kHz S SWITCHING CHARACTERISTICS Delay Time t 35 ns d V = 3.0V, I = 10mA, CC C V = - 0.5V, I = 1.0mA Rise Time t 35 ns BE(off) B1 r Storage Time t 200 ns s V = 3.0V, I = 10mA, CC C I = I = 1.0mA Fall Time t 50 ns B1 B2 f Notes: 6. Short duration pulse test used to minimize self-heating effect. 15 250 200 10 150 100 5 50 0 0 0.1 1 10 100 -50 050 100 150 V , COLLECTOR-BASE VOLTAGE (V) CB T , AMBIENT TEMPERATURE (C) Fig. 2, Input and Output Capacitance vs. A Fig. 1, Derating Curve - Total Collector-Base Voltage DS30449 Rev. 5 - 2 2 of 4 MMDT3904V Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) d C , INPUT CAPACITANCE (pF) IBO C , OUTPUT CAPACITANCE (pF) OBO