MMDT3904VC Lead-free Green DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching A Ultra-Small Surface Mount Package C B E 1 2 2 Lead Free By Design/RoHS Compliant (Note 4) Green Devic (Note 5) SOT-563 B C Dim Min Max Typ Mechanical Data E B C A 1 1 2 0.15 0.30 0.25 D B Case: SOT-563 1.10 1.25 1.20 G Case Material: Molded Plastic, Green Molding C 1.55 1.70 1.60 Compound. UL Flammability Classification Rating 94V-0 D 0.50 Moisture Sensitivity: Level 1 per J-STD-020C M K G 0.90 1.10 1.00 Terminals: Finish - Matte Tin annealed over Copper H 1.50 1.70 1.60 leadframe. Solderable per MIL-STD-202, Method 208 H L K 0.56 0.60 0.60 Terminal Connections: See Diagram L Marking (See Page 2): APK SEE NOTE 1 0.10 0.30 0.20 Ordering Information: See Below M 0.10 0.18 Date Code Information: See Page 2 C B E 2 2 1 All Dimensions in mm Weight: 0.003 grams (approximate) E B C 1 1 2 T = 25C unless otherwise specified Maximum Ratings A Characteristic Symbol Value Unit V Collector-Base Voltage CBO 60 V Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current - Continuous I 200 mA C Power Dissipation (Note 2) P mW d 200 R Thermal Resistance, Junction to Ambient qJA 625 C/W Operating and Storage Temperature Range T , T -55 to +150 C j STG (Note 3) Ordering Information Device Packaging Shipping MMDT3904VC-7 SOT-563 3000/Tape & Reel Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at T = 25C unless otherwise specified A Electrical Characteristics Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V 60 V I = 10mA, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V I = 1.0mA, I = 0 (BR)CEO 40 V C B V I = 10mA, I = 0 Emitter-Base Breakdown Voltage (BR)EBO 5.0 V E C I V = 30V, V = 3.0V Collector Cutoff Current CEX 50 nA CE EB(OFF) V = 30V, V = 3.0V Base Cutoff Current I 50 nA CE EB(OFF) BL ON CHARACTERISTICS (Note 6) I = 100A, V = 1.0V 40 C CE I = 1.0mA, V = 1.0V 70 C CE h I = 10mA, V = 1.0V DC Current Gain FE 100 300 C CE I = 50mA, V = 1.0V 60 C CE I = 100mA, V = 1.0V 30 C CE I = 10mA, I = 1.0mA 0.20 C B Collector-Emitter Saturation Voltage V V CE(SAT) I = 50mA, I = 5.0mA 0.30 C B I = 10mA, I = 1.0mA 0.65 0.85 C B Base-Emitter Saturation Voltage V V BE(SAT) I = 50mA, I = 5.0mA 0.95 C B SMALL SIGNAL CHARACTERISTICS C V = 5.0V, f = 1.0MHz, I = 0 Output Capacitance obo 4.0 pF CB E V = 0.5V, f = 1.0MHz, I = 0 Input Capacitance C 8.0 pF EB C ibo Input Impedance h 1.0 10 kW ie -4 Voltage Feedback Ratio h 0.5 8.0 x 10 re V = 10V, I = 1.0mA, CE C f = 1.0kHz Small Signal Current Gain h fe 100 400 h Output Admittance oe 1.0 40 mS V = 20V, I = 10mA, CE C Current Gain-Bandwidth Product f 300 MHz T f = 100MHz V = 5.0V, I = 100mA, CE C Noise Figure NF 5.0 dB R = 1.0kW, f = 1.0kHz S SWITCHING CHARACTERISTICS Delay Time t d 35 ns V = 3.0V, I = 10mA, CC C V = - 0.5V, I = 1.0mA BE(off) B1 t Rise Time r 35 ns Storage Time t 200 ns s V = 3.0V, I = 10mA, CC C I = I = 1.0mA B1 B2 Fall Time t 50 ns f Notes: 6. Short duration test pulse used to minimize self-heating. Marking Information APK = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 APK YM M = Month ex: 9 = September Date Code Key Year 2005 2006 2007 2008 2009 2010 2011 2012 Code S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 Code 8 9 O N D DS30636 Rev. 4 - 2 2 of 4 MMDT3904VC www.diodes.com