MMDT3906VC Lead-free Green DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Ideal for Low Power Amplification and Switching C B E 1 2 2 Ultra-Small Surface Mount Package SOT-563 Lead Free By Design/RoHS Compliant (Note 1) B C Typ Dim Min Max Gree Device (Note 4) A 0.15 0.30 0.25 E B C 1 2 1 B 1.10 1.25 1.20 Mechanical Data D G C 1.55 1.70 1.60 Case: SOT-563 D 0.50 Case Material: Molded Plastic,Gree Molding Compound. G 0.90 1.10 1.00 UL Flammability Classification Rating 94V-0 M K H Moisture Sensitivity: Level 1 per J-STD-020C 1.50 1.70 1.60 Terminal Connections: See Diagram K 0.56 0.60 0.60 H L Terminals: Finish - Matte Tin annealed over Copper L 0.10 0.30 0.20 leadframe. Solderable per MIL-STD-202, Method 208 SEE NOTE 2 M 0.10 0.18 Marking & Type Code Information: See Last Page All Dimensions in mm B E Ordering Information: See Last Page C 1 2 2 Weight: 0.003 grams (approximate) E B C 1 1 2 T = 25C unless otherwise specified A Maximum Ratings Characteristic Symbol Value Unit Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -40 V V Emitter-Base Voltage EBO -5.0 V Collector Current - Continuous I -200 mA C Power Dissipation (Note 3) P 150 mW d Thermal Resistance, Junction to Ambient R JA 833 C/W Operating and Storage and Temperature Range T , T j STG -55 to +150 C T = 25C unless otherwise specified Thermal Characteristics A Characteristic Symbol Value Unit Power Dissipation (Note 3) P mW d 150 Thermal Resistance, Junction to Ambient R JA 833 C/W Notes: 1. No purposefully added lead. 2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at T = 25C unless otherwise specified A Electrical Characteristics Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V I = -10A, I = 0 (BR)CBO -40 V C E Collector-Emitter Breakdown Voltage V I = -1.0mA, I = 0 (BR)CEO -40 V C B V Emitter-Base Breakdown Voltage (BR)EBO -5.0 V I = -10A, I = 0 E C V = -30V, V = -3.0V Collector Cutoff Current I -50 nA CE EB(OFF) CEX Base Cutoff Current I -50 nA V = -30V, V = -3.0V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = -100A, V = -1.0V 60 C CE I = -1.0mA, V = -1.0V 80 C CE I = -10mA, V = -1.0V DC Current Gain h 100 300 C CE FE I = -50mA, V = -1.0V 60 C CE I = -100mA, V = -1.0V 30 C CE I = -10mA, I = -1.0mA -0.25 C B Collector-Emitter Saturation Voltage V V CE(SAT) I = -50mA, I = -5.0mA -0.40 C B -0.65 -0.85 I = -10mA, I = -1.0mA C B Base-Emitter Saturation Voltage V V BE(SAT) -0.95 I = -50mA, I = -5.0mA C B SMALL SIGNAL CHARACTERISTICS V = -5.0V, f = 1.0MHz, I = 0 Output Capacitance C 4.5 pF CB E obo Input Capacitance C 10 pF V = -0.5V, f = 1.0MHz, I = 0 ibo EB C Input Impedance h 2.0 12 k ie -4 Voltage Feedback Ratio h re 0.1 10 x 10 V = 10V, I = 1.0mA, CE C f = 1.0kHz h Small Signal Current Gain fe 100 400 Output Admittance h 3.0 60 S oe V = -20V, I = -10mA, CE C Current Gain-Bandwidth Product f T 250 MHz f = 100MHz V = -5.0V, I = -100A, CE C Noise Figure NF 4.0 dB R = 1.0k, f = 1.0kHz S SWITCHING CHARACTERISTICS t Delay Time d 35 ns V = -3.0V, I = -10mA, CC C V = 0.5V, I = -1.0mA BE(off) B1 Rise Time t 35 ns r Storage Time t 225 ns s V = -3.0V, I = -10mA, CC C I = I = -1.0mA B1 B2 Fall Time t 75 ns f Notes: 5. Short duration test pulse used to minimize self-heating. DS30640 Rev. 3 - 2 2 of 4 MMDT3906VC www.diodes.com NEW PRODUCT