R0.15 0 MMDT3946LP4 COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) DFN1310H4-6 Epitaxial Planar Die Construction Dim Min Max Typ Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) A 1.25 1.38 1.30 Green Device (Note 2) Top View B 0.95 1.08 1.00 Mechanical Data C 0.20 0.30 0.25 G H Case: DFN1310H4-6 D* - - 0.10 Case Material: Molded Plastic. Green Molding Side View Compound. UL Flammability Classification Rating 94V-0 E** - - 0.20 K L Moisture Sensitivity: Level 1 per J-STD-020C Z G - 0.40 - Terminals: Finish NiPdAu over Copper leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 H 0 0.05 0.02 L E Marking & Type Code Information: See Page 4 B N K* 0.10 0.20 0.15 C B E 2 1 1 Ordering Information: See Page 4 C L* 0.30 0.50 0.40 D Z M D N M** - - 0.35 N* - - 0.25 A E B C 2 2 1 Bottom View Z** - - 0.05 Internal Schematic (TOP VIEW) All Dimensions in mm E , B , C = PNP3906 Section 1 1 1 * Dimensions D, K, L, N Repeat 4X ** Dimensions E, M, Z Repeat 2X E , B , C = NPN3904 Section 2 2 2 Maximum Ratings, NPN 3904 Section T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current Continuous 200 mA I C Power Dissipation (Notes 3, 4) P 200 mW d Thermal Resistance, Junction to Ambient (Note 3) 625 C/W R JA Maximum Ratings, PNP 3906 Section T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -40 V V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current - Continuous (Note 1) I -200 mA C Power Dissipation (Notes 3, 4) P 200 mW d Thermal Resistance, Junction to Ambient (Note 3) 625 C/W R JA Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at Electrical Characteristics, NPN 3904 Section T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage 60 V V I = 10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 40 V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6.0 V I = 10A, I = 0 (BR)EBO E C Collector Cutoff Current I 50 nA V = 30V, V = 3.0V CEX CE EB(OFF) Base Cutoff Current I 50 nA V = 30V, V = 3.0V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = 100A, V = 1.0V C CE 40 70 I = 1.0mA, V = 1.0V C CE DC Current Gain h 100 300 I = 10mA, V = 1.0V FE C CE 60 I = 50mA, V = 1.0V C CE 30 I = 100mA, V = 1.0V C CE 0.20 I = 10mA, I = 1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.30 I = 50mA, I = 5.0mA C B 0.65 0.85 I = 10mA, I = 1.0mA C B Base-Emitter Saturation Voltage V V BE(SAT) 0.95 I = 50mA, I = 5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 4.0 pF C V = 5.0V, f = 1.0MHz, I = 0 obo CB E V = 20V, I = 20mA, CE C Current Gain-Bandwidth Product f 300 MHz T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 35 ns V = 3.0V, I = 10mA, d CC C V = -0.5V, I = 1.0mA Rise Time t 35 ns BE(off) B1 r Storage Time t 200 ns V = 3.0V, I = 10mA, s CC C Fall Time t 50 ns I = I = 1.0mA f B1 B2 Electrical Characteristics, PNP 3906 Section T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V -40 V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -40 V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -10A, I = 0 (BR)EBO E C Collector Cutoff Current I -50 nA V = -30V, V = -3.0V CEX CE EB(OFF) Base Cutoff Current -50 nA I V = -30V, V = -3.0V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = -100A, V = -1.0V 60 C CE I = -1.0mA, V = -1.0V 80 C CE DC Current Gain h 100 300 I = -10mA, V = -1.0V FE C CE 60 I = -50mA, V = -1.0V C CE 30 I = -100mA, V = -1.0V C CE -0.25 I = -10mA, I = -1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.40 = -50mA, I = -5.0mA I C B -0.65 -0.85 I = -10mA, I = -1.0mA C B Base-Emitter Saturation Voltage V V BE(SAT) -0.95 I = -50mA, I = -5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 4.5 pF V = -5.0V, f = 1.0MHz, I = 0 obo CB E V = -20V, I = -10mA, CE C Current Gain-Bandwidth Product 250 MHz f T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 35 ns V = -3.0V, I = -10mA, d CC C Rise Time t 35 ns V = 0.5V, I = -1.0mA r BE(off) B1 Storage Time 225 ns t V = -3.0V, I = -10mA, s CC C Fall Time 75 ns I = I = -1.0mA t B1 B2 f Notes: 5. Short duration test pulse used to minimize self-heating effect. MMDT3946LP DS30822 Rev. 4 - 2 2 of 5 Diodes Incorporated www.diodes.com NEW PRODUCT