X-On Electronics has gained recognition as a prominent supplier of MMDT4146-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMDT4146-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMDT4146-7-F Diodes Incorporated

MMDT4146-7-F electronic component of Diodes Incorporated
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Part No.MMDT4146-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN BIPOLAR
Datasheet: MMDT4146-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.374 ea
Line Total: USD 0.37 
Availability - 12515
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12515
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.374
10 : USD 0.2794
100 : USD 0.1584
1000 : USD 0.1232
3000 : USD 0.0693
9000 : USD 0.0594
24000 : USD 0.0517
45000 : USD 0.0495

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the MMDT4146-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDT4146-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PART OBSOLETE - USE MMDT3946-7-F MMDT4146 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Complementary Pair One 4124-Type NPN Case: SOT-363 One 4126-Type PNP Case Material: Molded Plastic, Green Molding Compound, Epitaxial Planar Die Construction Note 5. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020D Ultra-Small Surface Mount Package Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Lead Free/RoHS Compliant (Note 3) Terminal Connections: See Diagram Gree Device (Note 4 and 5) Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) C B E 2 1 1 E1, B1, C1 = PNP4126 Section E2, B2, C2 = NPN4124 Section E B C 2 2 1 Top View Device Schematic Maximum Ratings, NPN 4124 Section T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 5.0 V EBO Collector Current Continuous (Note 1) 200 mA I C Maximum Ratings, PNP 4126 Section T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -25 V V CBO Collector-Emitter Voltage V -25 V CEO Emitter-Base Voltage V -4 V EBO Collector Current - Continuous (Note 1) I -200 mA C Thermal Characteristics Total Device Characteristic Symbol Value Unit Power Dissipation (Note 1, 2) P 200 mW D Thermal Resistance, Junction to Ambient (Note 1) 625 R C/W JA Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at MMDT4146 Electrical Characteristics, NPN 4124 Section T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V 30 V I = 10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 25 V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5.0 V I = 10A, I = 0 (BR)EBO E C Collector Cutoff Current I 50 nA V = 20V, I = 0V CBO CB E Emitter Cutoff Current 50 nA I V = 3.0V, I = 0V EBO EB C ON CHARACTERISTICS (Note 6) 120 360 I = 2.0mA, V = 1.0V C CE DC Current Gain h FE 60 I = 50mA, V = 1.0V C CE Collector-Emitter Saturation Voltage 0.30 V V I = 50mA, I = 5.0mA CE(SAT) C B Base-Emitter Saturation Voltage V 0.95 V I = 50mA, I = 5.0mA BE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 4.0 pF V = 5.0V, f = 1.0MHz, I = 0 obo CB E Input Capacitance 8.0 pF C V = 0.5V, f = 1.0MHz, I = 0 ibo EB C V = 1.0V, I = 2.0mA, CE C Small Signal Current Gain h 120 480 fe f = 1.0kHz V = 20V, I = 10mA, CE C Current Gain-Bandwidth Product f 300 MHz T f = 100MHz V = 5.0V, I = 100A, CE C Noise Figure NF 5.0 dB R = 1.0k, f = 1.0kHz S Electrical Characteristics, PNP 4126 Section T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage -25 V V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -25 V V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -4.0 V I = -10A, I = 0 (BR)EBO E C Collector Cutoff Current I -50 nA V = -20V, I = 0V CBO CB E Emitter Cutoff Current I -50 nA V = -3.0V, I = 0V EBO EB C ON CHARACTERISTICS (Note 6) 360 120 I = -2.0mA, V = -1.0V C CE DC Current Gain h FE 60 I = -50mA, V = -1.0V C CE Collector-Emitter Saturation Voltage -0.40 V V I = -50mA, I = -5.0mA CE(SAT) C B Base-Emitter Saturation Voltage -0.95 V V I = -50mA, I = -5.0mA BE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 4.5 pF V = -5.0V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 10 pF V = -0.5V, f = 1.0MHz, I = 0 ibo EB C V = -1.0V, I = -2.0mA, CE C Small Signal Current Gain 120 480 h fe f = 1.0kHz V = -20V, I = -10mA, CE C Current Gain-Bandwidth Product 250 MHz f T f = 100MHz V = -5.0V, I = -100A, CE C Noise Figure NF 4.0 dB R = 1.0k, f = 1.0kHz S Notes: 6. Short duration pulse test used to minimize self-heating effect. 2 of 6 June 2021 MMDT4146 Diodes Incorporated www.diodes.com Document number: DS30162 Rev. 12 - 4 OBSOLETE PART DISCONTINUED

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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