MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 C B E Ideal for Low Power Amplification and Switching 2 1 1 Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 B C Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 Gree Device (Note 4 and 5) E B C 2 2 1 C 2.00 2.20 Mechanical Data D 0.65 Nominal H Case: SOT-363 F 0.30 0.40 K Case Material: Molded Plastic. UL Flammability M H 1.80 2.20 Classification Rating 94V-0 J 0.10 Moisture Sensitivity: Level 1 per J-STD-020C J D F L K 0.90 1.00 Terminals: Solderable per MIL-STD-202, Method 208 C B E 2 1 1 L 0.25 0.40 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). M 0.10 0.25 Terminal Connections: See Diagram 0 8 Marking Information: K2T See Page 4 All Dimensions in mm E C Ordering & Date Code Information: See Page 4 B 2 2 1 Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage -40 V V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current - Continuous (Note 1) -600 mA I C Power Dissipation (Note 1, 2) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) 625 R C/W JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V -40 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -40 V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -100A, I = 0 (BR)EBO E C Collector Cutoff Current -100 nA I V = -35V, V = -0.4V CEX CE EB(OFF) Base Cutoff Current -100 nA I V = -35V, V = -0.4V BL CE EB(OFF) ON CHARACTERISTICS (Note 6) I = -100A, V = -1.0V C CE 30 60 I = -1.0mA, V = -1.0V C CE DC Current Gain h 100 I = -10mA, V = -1.0V FE C CE 100 300 I = -150mA, V = -2.0V C CE 20 I = -500mA, V = -2.0V C CE -0.40 I = -150mA, I = -15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.75 I = -500mA, I = -50mA C B -0.75 -0.95 I = -150mA, I = -15mA C B Base-Emitter Saturation Voltage V V BE(SAT) -1.30 I = -500mA, I = -50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 8.5 pF C V = -10V, f = 1.0MHz, I = 0 cb CB E Input Capacitance C 30 pF V = -0.5V, f = 1.0MHz, I = 0 eb EB C Input Impedance h 1.5 15 k ie -4 Voltage Feedback Ratio h 0.1 8.0 x 10 re V = -10V, I = -1.0mA, CE C f = 1.0kHz Small Signal Current Gain h 60 500 fe Output Admittance 1.0 100 h S oe V = -10V, I = -20mA, CE C Current Gain-Bandwidth Product f 200 MHz T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 15 ns d V = -30V, I = -150mA, CC C V = -2.0V, I = -15mA Rise Time t 20 ns BE(off) B1 r Storage Time t 225 ns s V = -30V, I = -150mA, CC C I = I = -15mA Fall Time t 30 ns B1 B2 f Notes: 6. Short duration pulse test used to minimize self-heating effect. 250 0.5 I Note 1 C = 10 I B 200 0.4 T = 25C A 150 0.3 100 T = 150C A 0.2 50 0.1 T = 50C A 0 0 0 175 200 25 50 75 100 125 150 110 100 1,000 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1 Max Power Dissipation vs. Fig. 2 Collector Emitter Saturation Voltage Ambient Temperature vs. Collector Current DS30110 Rev. 10 - 2 2 of 4 MMDT4403 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D V, COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V)