MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 5551-Type NPN SOT-363 A One 5401-Type PNP C B E Dim Min Max 2 1 1 Epitaxial Planar Die Construction A 0.10 0.30 Ideal for Medium Power Amplification and Switching B C B 1.15 1.35 Ultra-Small Surface Mount Package C 2.00 2.20 Lead Free/RoHS Compliant (Note 3) E B C 2 2 1 Gree Device (Note 4 and 5) D 0.65 Nominal G H F 0.30 0.40 H 1.80 2.20 Mechanical Data K M J 0.10 Case: SOT-363 K 0.90 1.00 Case Material: Molded Plastic. UL Flammability J D L F Classification Rating 94V-0 L 0.25 0.40 E1, B1, C1 = PNP5401 Section Moisture Sensitivity: Level 1 per J-STD-020C M 0.10 0.25 E2, B2, C2 = NPN5551 Section Terminals: Solderable per MIL-STD-202, Method 208 0 8 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 All Dimensions in mm leadframe). Terminal Connections: See Diagram Marking Information: KNM, See Page 5 Ordering & Date Code Information: See Page 5 Weight: 0.006 grams (approximate) Maximum Ratings, NPN 5551 Section T = 25C unless otherwise specified A Characteristic Symbol NPN5551 Unit Collector-Base Voltage V 180 V CBO Collector-Emitter Voltage V 160 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current - Continuous (Note 1) I 200 mA C Power Dissipation (Note 1, 2) 200 mW P d Thermal Resistance, Junction to Ambient (Note 1) R 625 C/W JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Maximum Ratings, PNP 5401 Section T = 25C unless otherwise specified A Characteristic Symbol PNP5401 Unit Collector-Base Voltage V -160 V CBO Collector-Emitter Voltage V -150 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current Continuous (Note 1) -200 mA I C Power Dissipation (Note 1, 2) 200 mW P d Thermal Resistance, Junction to Ambient (Note 1) R 625 K/W JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics, NPN 5551 Section T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V 180 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 160 V V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 6.0 V V I = 10A, I = 0 (BR)EBO E C nA V = 120V, I = 0 CB E Collector Cutoff Current 50 I CBO A V = 120V, I = 0, T = 100C CB E A Emitter Cutoff Current 50 nA I V = 4.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 6) I = 1.0mA, V = 5.0V 80 C CE DC Current Gain 80 250 h I = 10mA, V = 5.0V FE C CE 30 I = 50mA, V = 5.0V C CE 0.15 I = 10mA, I = 1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.20 I = 50mA, I = 5.0mA C B I = 10mA, I = 1.0mA C B Base-Emitter Saturation Voltage V 1.0 V BE(SAT) I = 50mA, I = 5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 6.0 pF V = 10V, f = 1.0MHz, I = 0 obo CB E V = 10V, I = 1.0mA, CE C Small Signal Current Gain h 50 250 fe f = 1.0kHz V = 10V, I = 10mA, CE C Current Gain-Bandwidth Product f 100 300 MHz T f = 100MHz V = 5.0V, I = 200A, CE C Noise Figure NF 8.0 dB R = 1.0k, f = 1.0kHz S Electrical Characteristics, PNP 5401 Section T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V -160 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -150 V V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -5.0 V V I = -10A, I = 0 (BR)EBO E C nA V = -120V, I = 0 CB E Collector Cutoff Current -50 I CBO A V = -120V, I = 0, T = 100C CB E A Emitter Cutoff Current -50 nA I V = -3.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 6) I = -1.0mA, V = -5.0V 50 C CE DC Current Gain 60 240 h I = -10mA, V = -5.0V FE C CE 50 I = -50mA, V = -5.0V C CE -0.2 I = -10mA, I = -1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.5 I = -50mA, I = -5.0mA C B I = -10mA, I = -1.0mA C B Base-Emitter Saturation Voltage V -1.0 V BE(SAT) I = -50mA, I = -5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 6.0 pF C V = -10V, f = 1.0MHz, I = 0 obo CB E V = -10V, I = -1.0mA, CE C Small Signal Current Gain h 40 200 fe f = 1.0kHz V = -10V, I = -10mA, CE C Current Gain-Bandwidth Product f 100 300 MHz T f = 100MHz V = -5.0V, I = -200A, CE C Noise Figure NF 8.0 dB R = 10, f = 1.0kHz S Notes: 6. Short duration pulse test used to minimize self-heating effect. MMDT5451 DS30171 Rev. 9 - 2 2 of 5 Diodes Incorporated www.diodes.com