X-On Electronics has gained recognition as a prominent supplier of MMDT5551-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMDT5551-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMDT5551-7-F Diodes Incorporated

MMDT5551-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMDT5551-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 160V 200mW
Datasheet: MMDT5551-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0766 ea
Line Total: USD 0.77

Availability - 5523
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
5523
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 10
Multiples : 10
10 : USD 0.0766
100 : USD 0.0642
300 : USD 0.0579
3000 : USD 0.0533
6000 : USD 0.0495
9000 : USD 0.0476

106669
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4025
10 : USD 0.2174
100 : USD 0.1127
1000 : USD 0.1058
3000 : USD 0.0713
9000 : USD 0.0598
24000 : USD 0.0575
99000 : USD 0.0564

994
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 0.273
5 : USD 0.2002
10 : USD 0.169
25 : USD 0.1378
50 : USD 0.1183

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the MMDT5551-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDT5551-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMDT5551-7-F is a dual, surface mount, low voltage, low leakage, dual PNP transistor manufactured by Diodes Incorporated. This transistor has a maximum collector current of 500 mA, a collector-to-emitter voltage of 65V, a maximum power dissipation of 0.625W, and an hFE (DC current gain) of 100-400. It features a low leakage current of 0.2uA and a maximum transition frequency of 200MHz. This transistor can be used in a variety of commercial and industrial applications, such as inrelay drivers, motor switching, airbag deployment, and audio switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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