The MMDT5551-7-F is a dual, surface mount, low voltage, low leakage, dual PNP transistor manufactured by Diodes Incorporated. This transistor has a maximum collector current of 500 mA, a collector-to-emitter voltage of 65V, a maximum power dissipation of 0.625W, and an hFE (DC current gain) of 100-400. It features a low leakage current of 0.2uA and a maximum transition frequency of 200MHz. This transistor can be used in a variety of commercial and industrial applications, such as inrelay drivers, motor switching, airbag deployment, and audio switching.