MMDTA06-7 Diodes Incorporated

MMDTA06 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data BV > 80V Case: SOT26 CEO I = 1A Peak Pulse Current Case Material: Molded Plastic, Green Molding Compound CM General purpose NPN transistors ideally suited for low power UL Flammability Classification Rating 94V-0 amplification and switching applications Moisture Sensitivity: Level 1 per J-STD-020 Dual transistors in a single SOT26 package taking half the Terminals: Matte Tin Finish Annealed over Copper Leadframe footprint of two equivalent transistors in SOT23 Solderable per MIL-STD-202, Method 208 Epitaxial Planar Die Construction Weight: 0.015 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability C2 SOT26 C1 B1 C1 E2 E1 B1 B2 B2 C2 E1 E2 Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel MMDTA06-7 A06 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMDTA06 Absolute Maximum Ratings ( T = +25C unless otherwise specified) A Characteristic Symbol Value Unit Collector-Base Voltage 100 V V CBO Collector-Emitter Voltage 80 V V CEO Emitter-Base Voltage 6 V V EBO Continuous Collector Current 500 mA I C Peak Pulse Collector Current I 1 A CM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.28 (Notes 6 & 7) Power Dissipation 10.3 W P D Linear Derating Factor 0.90 mW/C (Notes 5 & 7) 7.14 (Notes 6 & 7) 97 Thermal Resistance, Junction to Ambient R JA (Notes 5 & 7) 140 C/W Thermal Resistance, Junction to Lead (Note 8) 103 R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t 5 seconds. 7. For a dual device with one active die. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 8 MMDTA06 May 2015 Diodes Incorporated www.diodes.com Document Number: DS35114 Rev: 2 - 2 ADVANCE INFORMATION