MMDTA42 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-26 Ideal for Medium Power Amplification and Switching Dim Min Max Typ Lead Free/RoHS Compliant (Note 3) A 0.35 0.50 0.38 Gree Device, Note 4 and 5 B C B 1.50 1.70 1.60 Mechanical Data C 2.70 3.00 2.80 Case: SOT-26 D 0.95 Case Material: Molded Plastic,Gree Molding F 0.55 H Compound, Note 5. UL Flammability Classification H 2.90 3.10 3.00 Rating 94V-0 K J 0.013 0.10 0.05 Moisture Sensitivity: Level 1 per J-STD-020C M Terminal Connections: See Diagram K 1.00 1.30 1.10 Terminals: Finish - Matte Tin Solderable per L 0.35 0.55 0.40 J F L D MIL-STD-202, Method 208 M 0.10 0.20 0.15 Lead Free Plating (Matte Tin Finish annealed over 0 8 Copper leadframe). Q2 Marking Information: K3M, See Page 3 All Dimensions in mm Q1 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 300 V CBO Collector-Emitter Voltage V 300 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current (Note 1) (Note 2) I 500 mA C Power Dissipation (Note 1) 300 mW P d Thermal Resistance, Junction to Ambient (Note 1) R 417 C/W JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V 300 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 300 V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6.0 V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current 100 nA I V = 200V, I = 0 CBO CB E Collector Cutoff Current 100 nA I V = 6.0V, I = 0 EBO CE C ON CHARACTERISTICS (Note 6) I = 1.0mA, V = 10V 25 C CE DC Current Gain 40 h I = 10mA, V = 10V FE C CE 40 I = 30mA, V = 10V C CE Collector-Emitter Saturation Voltage 0.5 V V I = 20mA, I = 2.0mA CE(SAT) C B Base-Emitter Saturation Voltage 0.9 V V I = 20mA, I = 2.0mA BE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 3.0 pF V = 20V, f = 1.0MHz, I = 0 cb CB E V = 20V, I = 10mA, CE C Current Gain-Bandwidth Product 50 MHz f T f = 100MHz Notes: 6. Short duration pulse test used to minimize self-heating effect. 2.0 I 1.8 C 350 = 10 I B 1.6 T = 150C A 300 1.4 250 1.2 200 1.0 T = 25C A 0.8 150 0.6 100 0.4 T = -50C 50 A 0.2 0 0 0 175 200 25 50 75 100 125 150 110 100 1,000 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Max Power Dissipation vs. Fig. 2, Collector Emitter Saturation Voltage Ambient Temperature vs. Collector Current 10,000 1.0 V = 5V V = 5V CE CE 0.9 0.8 T = -50C 1,000 A T = 150C A 0.7 0.6 100 T = 25C 0.5 A T = -50C A 0.4 T = 25C A 10 0.3 T = 150C A 0.2 1 0.1 110 100 1 10 1,000 0.1 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4, Base Emitter Voltage vs. Collector Current Fig. 3, DC Current Gain vs. Collector Current DS30438 Rev. 5 - 2 2 of 3 MMDTA42 Diodes Incorporated www.diodes.com h, DC CURRENT GAIN P , POWER DISSIPATION (mW) FE D V, COLLECTOR TO EMITTER CE(SAT) V , BASE EMITTER VOLTAGE (V) BE(ON) SATURATION VOLTAGE (V)