MMST2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BV > 40V Case: SOT323 CEO I = 600mA Collector Current Case Material: Molded Plastic. Green Molding Compound C Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Complementary PNP Type: MMST2907A Terminals: Finish - Matte Tin Plated Leads, Solderable per e3 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.006 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability C SOT323 B E Top View Device Symbol Pin-Out Top View Ordering Information (Note 4) Product Status Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MMST2222A-7-F Active AEC-Q101 K3P 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMST2222A Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 75 V V CBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage 6 V VEBO Collector Current I 600 mA C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 200 mW P D Thermal Resistance, Junction to Ambient (Note 5) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage BV 75 V I = 10A, I = 0 CBO C E Collector-Emitter Breakdown Voltage BV 40 V I = 10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage BV 6.0 V I = 10A, I = 0 EBO E C nA V = 60V, I = 0 CB E Collector Cut-Off Current I 10 CBO A V = 60V, I = 0, T = +150C CB E A Collector Cut-Off Current I 10 nA V = 60V, V = 3V CEX CE EB(OFF) Base Cutoff Current I 20 nA V = 60V, V = 3V BL CE EB(OFF) ON CHARACTERISTICS (Note 7) I = 100A, V = 10V C CE 35 I = 1.0mA, V = 10V C CE 50 I = 10mA, V = 10V 75 C CE DC Current Gain 100 300 h I = 150mA, V = 10V FE C CE 40 I = 500mA, V = 10V C CE 50 I = 10mA, V = 10V, T = -55C C CE A 35 I = 150mA, V = 1.0V C CE 0.3 I = 150mA, I = 15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 1.0 I = 500mA, I = 50mA C B 0.6 1.2 I = 150mA, I = 15mA C B Base-Emitter Saturation Voltage V V BE(SAT) 2.0 I = 500mA, I = 50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 8 pF C V = 10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 25 pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C V = 20V, I = 20 A, CE C Current Gain-Bandwidth Product 300 MHz f T f = 1.0MHz V = 10V, I = 100A, CE C Noise Figure NF 4.0 dB R = 1k, f = 1.0kHz S SWITCHING CHARACTERISTICS Delay Time t 10 ns V = 30V, I = 150mA, d CC C Rise Time t 25 ns V = -0.5V, I = 15mA r BE(OFF) B1 Storage Time 225 ns t s V = 30V, I = 150mA, CC C Fall Time 60 ns I = I = 15mA t B1 B2 f Notes: 5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 7. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 6 MMST2222A May 2016 Diodes Incorporated www.diodes.com Document number: DS30080 Rev. 11 - 2