MMST2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary NPN Type Available (MMST2222A) C Ultra-Small Surface Mount Package Dim Min Max B C Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 Gree Device (Note 3 and 4) B 1.15 1.35 BE G C 2.00 2.20 Mechanical Data H D 0.65 Nominal Case: SOT-323 E 0.30 0.40 K Case Material: Molded Plastic,Gree Molding M Compound. UL Flammability Classification G 1.20 1.40 Rating 94V-0 (Note 4) J H 1.80 2.20 L D E Moisture Sensitivity: Level 1 per J-STD-020C J 0.0 0.10 Terminals: Solderable per MIL-STD-202, Method 208 K 0.90 1.00 Terminal Connections: See Diagram C Lead Free Plating (Matte Tin Finish annealed over L 0.25 0.40 Alloy 42 leadframe). M 0.10 0.18 Marking Information: K3F - See Page 4 0 8 Ordering & Date Code Information: See Page 4 B E All Dimensions in mm Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -60 V V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current - Continuous (Note 1) I -600 mA C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) R 625 C/W JA Operating and Storage and Temperature Range T , T -55 to +150 C j STG Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V -60 V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -60 V V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -10A, I = 0 (BR)EBO E C nA V = -50V, I = 0 CB E Collector Cutoff Current I -10 CBO A V = -50V, I = 0, T = 125C CB E A Collector Cutoff Current I -50 nA V = -30V, V = -0.5V CEX CE EB(OFF) Base Cutoff Current I -50 nA V = -30V, V = -0.5V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = -100A, V = -10V C CE 75 I = -1.0mA, V = -10V 100 C CE DC Current Gain h 100 I = -10mA, V = -10V FE C CE 100 300 I = -150mA, V = -10V C CE 50 I = -500mA, V = -10V C CE -0.4 I = -150mA, I = -15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -1.6 I = -500mA, I = -50mA C B I = 150mA, I = 15mA -1.3 C B Base-Emitter Saturation Voltage V V BE(SAT) -2.6 I = 500mA, I = 50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8.0 pF V = -10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance 30 pF C V = -2.0V, f = 1.0MHz, I = 0 ibo EB C V = -20V, I = -50mA, CE C Current Gain-Bandwidth Product 200 MHz f T f = 100MHz SWITCHING CHARACTERISTICS Turn-On Time 45 ns t on V = -30V, I = -150mA, CC C Delay Time t 10 ns d I = -15mA B1 Rise Time t 40 ns r Turn-Off Time t 100 ns off V = -6.0V, I = -150mA, CC C Storage Time 80 ns t s I = I = -15mA B1 B2 Fall Time t 30 ns f Notes: 5. Short duration pulse test used to minimize self-heating effect. 200 f = 1MHz Note 1 150 100 C ibo 50 C obo 0 0 175 200 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) V , REVERSE VOLTAGE (V) A R Fig. 1 Max Power Dissipation vs. Ambient Temperature Fig. 2 Typical Capacitance Characteristics DS30081 Rev. 9 - 2 2 of 4 MMST2907A Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D CAPACITANCE (pF)