X-On Electronics has gained recognition as a prominent supplier of MMST2907A-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMST2907A-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMST2907A-7-F Diodes Incorporated

MMST2907A-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMST2907A-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 200 mW Surface Mount SOT-323
Datasheet: MMST2907A-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5025: USD 0.0259 ea
Line Total: USD 130.15 
Availability - 289933
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 5025  Multiples: 1
Pack Size: 1
Availability Price Quantity
712
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 735
Multiples : 1
735 : USD 0.1155

32010
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0415
9000 : USD 0.035
24000 : USD 0.0287

289933
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5025
Multiples : 1
5025 : USD 0.0259
6000 : USD 0.0256
9000 : USD 0.0229
15000 : USD 0.0226
21000 : USD 0.0224
24000 : USD 0.0214
30000 : USD 0.0212
75000 : USD 0.02
150000 : USD 0.0188

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0225
9000 : USD 0.0225
15000 : USD 0.0225
60000 : USD 0.0225
90000 : USD 0.0225

33
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0464
100 : USD 0.0381
300 : USD 0.0339
3000 : USD 0.0306
6000 : USD 0.0282
9000 : USD 0.0268

39511
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.165
10 : USD 0.1177
100 : USD 0.0594
1000 : USD 0.0528
3000 : USD 0.0418
9000 : USD 0.0352
24000 : USD 0.033

712
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 365
Multiples : 1
365 : USD 0.1155

2525880
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6000
Multiples : 3000
6000 : USD 0.0342

290030
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5025
Multiples : 1
5025 : USD 0.0259

29100
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0415
9000 : USD 0.035
24000 : USD 0.0287

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMST2907A-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMST2907A-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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.The MMST2907A-7-F is a PNP bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is a surface mount device, with a SOT-323 package. It is rated for a maximum voltage of 60V, maximum current of 600 mA, frequency of 200 MHz, and maximum power dissipation of 200 mW. This transistor is designed for high-frequency switching applications such as frequency modulation, linear amplification, and switching in communication systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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