MMST4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features Mechanical Data
Epitaxial Planar Die Construction Case: SOT-323
Complementary PNP Type Available (MMST4126) Case Material: Molded Plastic,Gree Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Ideal for Medium Power Amplification and Switching
Moisture Sensitivity: Level 1 per J-STD-020D
Ultra-Small Surface Mount Package
Terminal Connections: See Diagram
Lead Free/RoHS Compliant (Note 2)
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
Gree Device (Notes 3 and 4)
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
B E
Top View
Device Schematic
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage V 30 V
CBO
Collector-Emitter Voltage V 25 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Collector Current - Continuous (Note 1) 200 mA
I
C
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) 200 mW
P
D
Thermal Resistance, Junction to Ambient (Note 1) R 625 C/W
JA
Operating and Storage Temperature Range -55 to +150 C
T , T
J STG
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage 30 V
V I = 10A, I = 0
(BR)CBO C E
Collector-Emitter Breakdown Voltage 25 V
V I = 1.0mA, I = 0
(BR)CEO C B
Emitter-Base Breakdown Voltage 5.0 V
V I = 10A, I = 0
(BR)EBO E C
Collector Cutoff Current 50 nA
I V = 20V, I = 0V
CBO CB E
Emitter Cutoff Current I 50 nA V = 3.0V, I = 0V
EBO EB C
ON CHARACTERISTICS (Note 5)
120 360 I = 2.0mA, V = 1.0V
C CE
DC Current Gain h
FE
60
I = 50mA, V = 1.0V
C CE
Collector-Emitter Saturation Voltage V 0.30 V I = 50mA, I = 5.0mA
CE(SAT) C B
Base-Emitter Saturation Voltage 0.95 V
V I = 50mA, I = 5.0mA
BE(SAT) C B
SMALL SIGNAL CHARACTERISTICS
Output Capacitance 4.0 pF
C V = 5.0V, f = 1.0MHz, I = 0
obo CB E
Input Capacitance 8.0 pF
C V = 0.5V, f = 1.0MHz, I = 0
ibo EB C
V = 1.0V, I = 2.0mA,
CE C
Small Signal Current Gain h 120 480
fe
f = 1.0kHz
V = 20V, I = 10mA,
CE C
Current Gain-Bandwidth Product 300 MHz
f
T
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at
MMST4124
1,000
400
350
300
250
100
200
150
10
100
50
0 1
1
0 25 50 100 125 150 175 200 0.1 10
75 100 1,000
I , COLLECTOR CURRENT (mA)
T , AMBIENT TEMPERATURE (C)
C
A
Fig. 2 Typical DC Current Gain vs.
Fig. 1 Power Dissipation vs.
Collector Current
Ambient Temperature (Note 1)
1 10
0.1 1
0.01 0.1
0.1 1 10 1,000
100
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Fig. 4 Typical Base-Emitter Saturation Voltage
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
vs. Collector Current
15
f = 1MHz
10
5
C
ibo
C
obo
0
1
0.1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 5 Typical Capacitance Characteristics
2 of 3 January 2009
MMST4124
Diodes Incorporated
www.diodes.com
Document number: DS30163 Rev. 9 - 2
V, COLLECTOR-EMITTER
CE(SAT)
P , POWER DISSIPATION (mW)
CAPACITANCE (pF) D
SATURATION VOLTAGE
(V)
h, DC CURRENT GAIN
V , BASE-EMITTER SATURATION VOLTAGE (V)
FE
BE(SAT)