MMST4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary NPN Type Available (MMST4124) Dim Min Max C Ideal for Medium Power Amplification and Switching A 0.25 0.40 Ultra-Small Surface Mount Package B C B 1.15 1.35 Lead Free/RoHS Compliant (Note 2) C 2.00 2.20 Gree Device (Notes 3 and 4) BE D 0.65 Nominal G Mechanical Data E 0.30 0.40 H Case: SOT-323 G 1.20 1.40 Case Material: Molded Plastic,Gree Molding K M H 1.80 2.20 Compound, Note 4. UL Flammability Classification Rating 94V-0 J 0.0 0.10 Moisture Sensitivity: Level 1 per J-STD-020C J K 0.90 1.00 D F L Terminal Connections: See Diagram L 0.25 0.40 C Terminals: Solderable per MIL-STD-202, Method 208 M 0.10 0.18 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). 0 8 Marking Information: See Page 3 All Dimensions in mm Ordering Information: See Page 3 B E Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -25 V V CBO Collector-Emitter Voltage -25 V V CEO Emitter-Base Voltage V -4.0 V EBO Collector Current - Continuous (Note 1) I -200 mA C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) 625 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage -25 V V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -25 V V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -4.0 V V I = -10A, I = 0 (BR)EBO E C Collector Cutoff Current I -50 nA V = -20V, I = 0V CBO CB E Emitter Cutoff Current I -50 nA V = -3.0V, I = 0V EBO EB C ON CHARACTERISTICS (Note 5) 120 360 I = -2.0mA, V = -1.0V C CE DC Current Gain h FE 60 I = -50mA, V = -1.0V C CE Collector-Emitter Saturation Voltage -0.40 V V I = -50mA, I = -5.0mA CE(SAT) C B Base-Emitter Saturation Voltage -0.95 V V I = -50mA, I = -5.0mA BE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 4.5 pF C V = -5.0V, f = 1.0MHz, I = 0 obo CB E Input Capacitance 10 pF C V = -0.5V, f = 1.0MHz, I = 0 ibo EB C Small Signal Current Gain 120 480 h V = 1.0V, I = -2.0mA, f = 1.0kHz fe CE C Current Gain-Bandwidth Product f 250 MHz V = -20V, I = -10mA, f = 100MHz T CE C V = -5.0V, I = -100A, CE C Noise Figure NF 4.0 dB R = 1.0k, f = 1.0kHz S Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 400 100 Note 1 f = 1MHz 350 300 250 200 10 150 C ibo 100 50 1 0 0 175 200 25 50 75 100 125 150 0.1 1 10 100 T , AMBIENT TEMPERATURE (C) A V , COLLECTOR-BASE VOLTAGE (V) CB Fig. 1, Max Power Dissipation vs. Fig. 2, Input and Output Capacitance vs. Ambient Temperature Collector-Base Voltage 1,000 10 = 10 1 100 0.1 10 0.01 1 10 1 1,000 1 100 1,000 0.1 10 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4, Typical Collector-Emitter Saturation Voltage Fig. 3, Typical DC Current Gain vs. vs. Collector Current Collector Current 1.0 0.9 0.8 0.7 0.6 I C = 10 I B 0.5 110 100 I , COLLECTOR CURRENT (mA) C Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current MMST4126 DS30161 Rev. 7 - 2 2 of 3 Diodes Incorporated www.diodes.com V , BASE-EMITTER (V) BE(SAT) P , POWER DISSIPATION (mW) h, DC CURRENT GAIN D FE SATURATION VOLTAGE V, COLLECTOR-EMITTER (V) C , INPUT CAPACITANCE (pF) CE(SAT) IBO SATURATION VOLTAGE C , OUTPUT CAPACITANCE (pF) OBO