MMST4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Type Available (MMST4403) Dim Min Max C Ultra-Small Surface Mount Package A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C B 1.15 1.35 Gree Device (Note 3 and 4) C 2.00 2.20 BE Mechanical Data G D 0.65 Nominal Case: SOT-323 H E 0.30 0.40 Case Material: Molded Plastic,Gree Molding Compound, G 1.20 1.40 K Note 4. UL Flammability Classification Rating 94V-0 M Moisture Sensitivity: Level 1 per J-STD-020C H 1.80 2.20 Terminals: Solderable per MIL-STD-202, Method 208 J J 0.0 0.10 L D E Terminal Connections: See Diagram K 0.90 1.00 Lead Free Plating (Matte Tin Finish annealed over C L 0.25 0.40 Alloy 42 leadframe). Marking Information: K3X - See Page 4 M 0.10 0.18 Ordering & Date Code Information: See Page 4 0 8 Weight: 0.006 grams (approximate) B E All Dimensions in mm Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 60 V V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current Continuous (Note 1) I 600 mA C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) R 625 C/W JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage 60 V V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 40 V V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 6.0 V V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current I 100 nA V = 35V, V = 0.4V CEX CE EB(OFF) Base Cutoff Current I 100 nA V = 35V, V = 0.4V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = 100A, V = 1.0V C CE 20 I = 1.0mA, V = 1.0V 40 C CE DC Current Gain 80 h I = 10mA, V = 1.0V FE C CE 100 300 I = 150mA, V = 1.0V C CE 40 I = 500mA, V = 2.0V C CE 0.40 I = 150mA, I = 15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.75 I = 500mA, I = 50mA C B 0.75 0.95 I = 150mA, I = 15mA C B Base-Emitter Saturation Voltage V V BE(SAT) 1.2 I = 500mA, I = 50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8.5 pF V = 5.0V, f = 1.0MHz, I = 0 ob CB E Input Capacitance C 30 pF V = 0.5V, f = 1.0MHz, I = 0 eb EB C Input Impedance 1.0 15 k h ie -4 Voltage Feedback Ratio 0.1 8.0 x 10 h V = 10V, I = 1.0mA, re CE C Small Signal Current Gain 40 500 f = 1.0MHz h fe Output Admittance 1.0 30 h S oe V = 10V, I = 20mA, CE C Current Gain-Bandwith Product 250 MHz f T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 15 ns V = 30V, I = 150mA, d CC C Rise Time t 20 ns V = 2.0V, I = 15mA r BE(OFF) B1 Storage Time t 225 ns V = 30V, I = 150mA, s CC C Fall Time 30 ns I = I = 15mA t B1 B2 r 5. Short duration pulse test used to minimize self-heating effect. 1,000 400 350 T = 125C A 300 250 100 200 150 10 100 50 1 0 1 0 175 200 10 1,000 25 50 75 100 125 150 0.1 100 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Max Power Dissipation vs Fig. 2 Typical DC Current Gain vs Ambient Temperature Collector Current DS30084 Rev. 9 - 2 2 of 4 MMST4401 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D h, DC CURRENT GAIN FE