MMST4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-323 Complementary NPN Type Available (MMST4401) Case Material: Molded Plastic,Gree Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Lead Free, RoHS Compliant (Note 1) Terminals: Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free.Gree Device (Note 2) Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Weight: 0.006 grams (approximate) SOT-323 Pinout top view Top view Device symbol Ordering Information (Note 3) Packaging Shipping Device SOT-323 3000/Tape & Reel MMST4403-7-F Notes: 1. No purposefully added lead. 2. Diodes Incs Green Policy can be found on our website at MMST4403 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current Continuous (Note 4) -600 mA I C Power Dissipation (Note 4) 200 mW P d Thermal Resistance, Junction to Ambient (Note 4) 625 K/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V -40 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -40 V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -100A, I = 0 (BR)EBO E C Collector Cutoff Current -100 nA I V = -35V, V = -0.4V CEX CE EB(OFF) Base Cutoff Current -100 nA I V = -35V, V = -0.4V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) 30 I = -100A, V = -1.0V C CE 60 I = -1.0mA, V = -1.0V C CE DC Current Gain h 100 I = -10mA, V = -1.0V FE C CE 100 300 I = -150mA, V = -2.0V C CE 20 I = -500mA, V = -2.0V C CE -0.40 I = -150mA, I = -15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.75 I = -500mA, I = -50mA C B -0.75 -0.95 I = -150mA, I = -15mA C B Base-Emitter Saturation Voltage V V BE(SAT) -1.30 I = -500mA, I = -50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8.5 pF V = -10V, f = 1.0MHz, I = 0 ob CB E Input Capacitance C 30 pF V = -0.5V, f = 1.0MHz, I = 0 eb EB C Input Impedance 1.5 15 k h ie -4 Voltage Feedback Ratio 0.1 8.0 x 10 h re V = -10V, I = -1.0mA, CE C f = 1.0MHz Small Signal Current Gain 60 500 h fe Output Admittance h 1.0 100 S oe V = -10V, I = -20mA, CE C Current Gain-Bandwith Product 200 MHz f T f = 100MHz SWITCHING CHARACTERISTICS Delay Time 15 ns t d V = -30V, I = -150mA, CE C V = -2.0V, I = -15mA BE(OFF) B1 Rise Time 20 ns t r Storage Time 225 ns t s V = -30V, I = -150mA, CE C I = I = -15mA B1 B2 Fall Time t 30 ns r Notes: 5. Short duration pulse test used to minimize self-heating effect MMST4403 2 of 5 June 2011 Diodes Incorporated Datasheet number: DS30083 Rev. 8 - 2 www.diodes.com