MMST5401 160V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT323 Ultra-Small Surface Mount Package Case Material: Molded Plastic. Green Molding Compound. Complementary PNP Type: MMST5551 UL Flammability Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads, Solderable per Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208 e3 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.006 grams (Approximate) PPAP Capable (Note 4) SOT323 C B E Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4 & 5) Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel Part Number AEC-Q101 K4M 7 8 3,000 MMST5401-7-F AEC-Q101 K4M 13 8 10,000 MMST5401-13-F Automotive K4M 7 8 3,000 MMST5401Q-7-F Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See MMST5401 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -160 V V CBO Collector-Emitter Voltage -150 V V CEO Emitter-Base Voltage -5 V V EBO Continuous Collector Current -200 mA I C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 200 mW D Thermal Resistance, Junction to Ambient (Note 6) R 625 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Collector-Base Breakdown Voltage V -160 V I = -100A, I = 0 CBO C E Collector-Emitter Breakdown Voltage V -150 V I = -1mA, I = 0 CEO C B Emitter-Base Breakdown Voltage V -5 V I = -100A, I = 0 EBO E C nA V = -120V, I = 0 CB E Collector Cutoff Current I -50 CBO A V = -120V, I = 0, T = +100C CB E A Emitter Cutoff Current -50 nA I V = -3V, I = 0 EBO EB C ON CHARACTERISTICS (Note 8) 50 I = -1mA , V = -5V C CE DC Current Gain h 60 240 I = -10mA, V = -5V FE C CE 50 I = -50mA, V = -5V C CE -0.2 I = -10mA, I = -1mA C B Collector-Emitter Saturation Voltage V VCE(SAT) -0.5 I = -50mA, I = -5mA C B IC = -10mA, IB = -1mA Base-Emitter Saturation Voltage -1 V V BE(SAT) I = -50mA, I = -5mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 6.0 pF C V = -10V, f = 1MHz, I = 0 obo CB E V = -10V, I = -1mA, CE C Small Signal Current Gain h 40 260 fe f = 1kHz V = -10V, I = -10mA, CE C Current Gain-Bandwidth Product 100 300 MHz f T f = 100MHz V = -5V, I = -200A, CE C Noise Figure NF 8 dB R =10, f = 1kHz S Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 May 2018 MMST5401 Diodes Incorporated www.diodes.com Document number: DS30170 Rev. 11 - 2