MMST5551
180V NPN SMALL SIGNAL TRANSISTOR IN SOT323
Features Mechanical Data
Epitaxial Planar Die Construction Case: SOT323
Ultra-Small Surface Mount Package Case Material: Molded Plastic. Green Molding Compound.
Complementary NPN Type: MMST5401 UL Flammability Rating 94V-0
Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads, Solderable per
Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208
Qualified to AEC-Q101 Standards for High Reliability Weight: 0.006 grams (approximate)
PPAP Capable (Note 4)
SOT323
C
B
E
Top View Top View
Device Symbol
Pin-Out
Ordering Information (Notes 4 & 5)
Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per reel
Device
AEC-Q101 K4N 7 8 3,000
MMST5551-7-F
Automotive K4N 7 8 3,000
MMST5551Q-7-F
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
MMST5551
Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage V 180 V
CBO
Collector-Emitter Voltage V 160 V
CEO
Emitter-Base Voltage 6.0 V
V
EBO
Continuous Collector Current 200 mA
I
C
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P 200 mW
D
Thermal Resistance, Junction to Ambient (Note 6) R 625 C/W
JA
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage 180 V
V I = 100A, I = 0
CBO C E
Collector-Emitter Breakdown Voltage 160 V
V I = 1.0mA, I = 0
CEO C B
Emitter-Base Breakdown Voltage 6.0 V
V I = 10A, I = 0
EBO E C
nA V = 120V, I = 0
CB E
Collector Cutoff Current 50
I
CBO
A
V = 120V, I = 0, T = +100C
CB E A
Emitter Cutoff Current I 50 nA V = 4.0V, I = 0
EBO EB C
ON CHARACTERISTICS (Note 8)
80 I = 1.0mA , V = 5.0V
C CE
DC Current Gain h 80 250 I = 10mA, V = 5.0V
FE C CE
30 I = 50mA, V = 5.0V
C CE
0.15 I = 10mA, I = 1.0mA
C B
Collector-Emitter Saturation Voltage V
V
CE(SAT)
0.20 I = 50mA, I = 5.0mA
C B
I = 10mA, I = 1.0mA
C B
Base-Emitter Saturation Voltage V 1.0 V
BE(SAT)
I = 50mA, I = 5.0mA
C B
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C 6.0 pF V = -10V, f = 1.0MHz, I = 0
obo CB E
V = 10V, I = 1.0mA,
CE C
Small Signal Current Gain 50 250
h
fe
f = 1.0kHz
V = 10V, I = 10mA,
CE C
Current Gain-Bandwidth Product f 100 300 MHz
T
f = 100MHz
V = 5.0V, I = 200A,
CE C
Noise Figure NF 8.0 dB
R =1.0 , f = 1.0kHz
S
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%.
2 of 4 May 2014
MMST5551
Diodes Incorporated
www.diodes.com
Document number: DS30173 Rev. 9 - 2