MMST6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Mechanical Data 40V Darlington Transistor Case: SOT-323 Epitaxial Planar Die Construction Case Material: Molded Plastic,Gree Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020 High Current Gain Terminals: Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Lead Free, RoHS Compliant (Note 1) leadframe). Halogen and Antimony FreeGree Device (Note 2) Weight: 0.006 grams (approximate) Pin-out Top view Top View Device symbol Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel MMST6427-7-F K1D 7 8 3,000 Notes: 1. No purposefully added lead. 2. Diodes Inc. s Green Policy can be found on our website at MMST6427 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 12 V EBO Collector Current - Continuous (Note 4) 500 mA I C Power Dissipation (Note 4) 200 mW P d Thermal Resistance, Junction to Ambient (Note 4) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage BV 40 V I = 100A, I = 0 CBO C E Collector-Emitter Breakdown Voltage BV 40 V I = 10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage 12 V BV I = 10A, I = 0 EBO E C Collector Cutoff Current 50 nA I V = 30V, I = 0 CBO CB E Collector Cutoff Current I 1.0 A V = 25V, I = 0 CEO CE B Emitter Cutoff Current I 50 nA V = 10V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) I = 10mA, V = 5.0V 10,000 100,000 C CE DC Current Gain h 20,000 200,000 I = 100mA, V = 5.0V FE C CE 14,000 140,000 I = 500mA, V = 5.0V C CE I = 50mA, I = 0.5mA 1.2 C B Collector-Emitter Saturation Voltage V V CE(sat) 1.5 I = 500mA, I = 0.5mA C B Base-Emitter Saturation Voltage 2.0 V V I = 500mA, I = 0.5mA BE(sat) C B Base-Emitter On Voltage V 1.75 V I = 50mA, V =5.0V BE(on) C CE SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8.0 Typical pF V = 10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance 15 Typical pF C V = 0.5V, f = 1.0MHz, I = 0 ibo EB C Notes: 4. Device mounted on 25mm x 22 mm x 1.6mm FR4 PCB, 1oz copper, singled sided 5. Short duration pulse test used to minimize self-heating effect. 2 of 5 August 2011 MMST6427 Diodes Incorporated www.diodes.com Document number: DS30166 Rev. 11 - 2