MMSTA13/MMSTA14
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
Epitaxial Planar Die Construction
SOT-323
A
Complementary PNP Type Available
Dim Min Max
(MMSTA63/MMSTA64)
C
A 0.25 0.40
Ideal for Low Power Amplification and Switching
B 1.15 1.35
High Current Gain
B C
C 2.00 2.20
Ultra-Small Surface Mount Package
D 0.65 Nominal
Lead Free/RoHS Compliant (Note 2) BE
E 0.30 0.40
Gree Device (Note 3 and 4)
G
G 1.20 1.40
H
H 1.80 2.20
Mechanical Data
K
M
J 0.0 0.10
Case: SOT-323
K 0.90 1.00
Case Material: Molded Plastic,Gree Molding
J
L 0.25 0.40
D E L
Compound, Note 4. UL Flammability Classification
M 0.10 0.18
Rating 94V-0
0 8
Moisture Sensitivity: Level 1 per J-STD-020C
All Dimensions in mm
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
C
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
MMSTA13 Marking K2D, K3D, See Page 3
MMSTA14 Marking K3D, See Page 3
Ordering & Date Code Information: See Page 3
B E
Weight: 0.006 grams (approximate)
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage V 30 V
CBO
Collector-Emitter Voltage V 30 V
CEO
Emitter-Base Voltage V 10 V
EBO
Collector Current - Continuous (Note 1) I 300 mA
C
Power Dissipation (Note 1) P 200 mW
d
Thermal Resistance, Junction to Ambient (Note 1) 625 C/W
R
JA
Operating and Storage Temperature Range T , T -55 to +150 C
j STG
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Emitter Breakdown Voltage V 30 V I = 100A V = 0V
(BR)CEO C BE
Collector Cutoff Current 100 nA
I V = 30V, I = 0
CBO CB E
Emitter Cutoff Current 100 nA
I V = 10V, I = 0
EBO EB C
ON CHARACTERISTICS (Note 5)
I = 10mA, V = 5.0V
C CE
DC Current Gain MMSTA13 5,000
MMSTA14 10,000 I = 10mA, V = 5.0V
C CE
h
FE
MMSTA13 10,000
I = 100mA, V = 5.0V
C CE
MMSTA14 20,000
I = 100mA, V = 5.0V
C CE
Collector-Emitter Saturation Voltage V 1.5 V I = 100mA, I = 100A
CE(SAT) C B
Base-Emitter Saturation Voltage V 2.0 V I = 100mA, V = 5.0V
BE(SAT) C CE
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C 8.0 Typical pF V = 10V, f = 1.0MHz, I = 0
obo CB E
Input Capacitance C 15 Typical pF V = 0.5V, f = 1.0MHz, I = 0
ibo EB C
V = 5.0V, I = 10mA,
CE C
Current Gain-Bandwidth Product f 125 MHz
T
f = 100MHz
Note: 5. Short duration pulse test used to minimize self-heating effect.
200 1.10
I
1.05
C
= 1000
I
B
1.00
T = -50C
0.95 A
150
0.90
0.85
0.80
T = 25C
100 A
0.75
0.70
0.65
0.60
T = 150C
50 A
0.55
0.50
0.45
0
0.40
0 175 200 1,000
25 50 75 100 125 150 1 10 100
I , COLLECTOR CURRENT (mA)
T , AMBIENT TEMPERATURE (C) C
A
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
Fig. 1, Max Power Dissipation vs. Ambient Temperature
1,000,000 1.6
1.5 V = 5V
CE
T = -50C
A
1.4
1.3
100,000
1.2
T = 25C
A
1.1
1.0
0.9
10,000
0.8
T = 150C
A
0.7
0.6
1,000
0.5
0.4
0.3
100 0.2
100
0.1 1 10
10 1,000
1 100
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA) C
C
Fig. 4, Base Emitter Voltage vs. Collector Current
Fig. 3, DC Current Gain vs. Collector Current
MMSTA13/MMSTA14
DS30165 Rev. 9 - 2 2 of 3
Diodes Incorporated
www.diodes.com
h, DC CURRENT GAIN
FE P , POWER DISSIPATION (mW)
D
V, COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
V , BASE EMITTER VOLTAGE (V)
BE(ON)