MMSTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary PNP Type Available (MMSTA92) C Dim Min Max Ideal for Low Power Amplification and Switching A 0.25 0.40 Ultra-Small Surface Mount Package B C B 1.15 1.35 Lead Free/RoHS Compliant (Note 2) C 2.00 2.20 BE Gree Device (Note 3 and 4) D 0.65 Nominal G E 0.30 0.40 H Mechanical Data G 1.20 1.40 K H 1.80 2.20 Case: SOT-323 M Case Material: Molded Plastic,Gree Molding Compound, J 0.0 0.10 Note 4. UL Flammability Classification Rating 94V-0 K 0.90 1.00 J D E L Moisture Sensitivity: Level 1 per J-STD-020C L 0.25 0.40 Terminal Connections: See Diagram C M 0.10 0.18 Terminals: Solderable per MIL-STD-202, Method 208 0 8 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 All Dimensions in mm leadframe). Marking Information: K3M, See Page 3 Ordering & Date Code Information: See Page 3 B E Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 300 V CBO Collector-Emitter Voltage V 300 V CEO Emitter-Base Voltage 6.0 V V EBO Collector Current (Note 1) 200 mA I C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) 625 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V 300 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 300 V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6.0 V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current 100 nA I V = 200V, I = 0 CBO CB E Collector Cutoff Current 100 nA I V = 6.0V, I = 0 EBO CE C ON CHARACTERISTICS (Note 5) I = 1.0mA, V = 10V 25 C CE DC Current Gain 40 I = 10mA, V = 10V h C CE FE 40 I = 30mA, V = 10V C CE Collector-Emitter Saturation Voltage 0.5 V V I = 20mA, I = 2.0mA CE(SAT) C B Base-Emitter Saturation Voltage 0.9 V V I = 20mA, I = 2.0mA BE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 3.0 pF V = 20V, f = 1.0MHz, I = 0 cb CB E V = 20V, I = 10mA, CE C Current Gain-Bandwidth Product 50 MHz f T f = 100MHz Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 200 2.0 I 1.8 C = 10 I B 1.6 T = 150C A 150 1.4 1.2 100 1.0 T = 25C A 0.8 0.6 50 0.4 T = -50C A 0.2 0 0 0 25 50 100 125 150 175 200 75 110 1,000 100 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Max Power Dissipation vs. Fig. 2, Collector Emitter Saturation Voltage Ambient Temperature vs. Collector Current 10,000 V = 5V 1.0 CE V = 5V CE 0.9 1,000 0.8 T = -50C A T = 150C A 0.7 0.6 100 T = 25C 0.5 A T = -50C A T = 25C A 0.4 10 0.3 T = 150C A 0.2 1 0.1 1 10 100 1,000 0.1 110 100 I , COLLECTOR CURRENT (mA) C I , COLLECTOR CURRENT (mA) C Fig. 3, DC Current Gain vs. Fig. 4, Base Emitter Voltage vs. Collector Current Collector Current 100 V = 5V CE 10 1 1 10 I , COLLECTOR CURRENT (mA) C Fig. 5, Gain Bandwidth Product vs. Collector Current MMSTA42 DS30175 Rev. 10 - 2 2 of 3 Diodes Incorporated www.diodes.com h, DC CURRENT GAIN FE P , POWER DISSIPATION (mW) f, GAIN BANDWIDTH PRODUCT (MHz) D T V, COLLECTOR TO EMITTER CE(SAT) V , BASE EMITTER VOLTAGE (V) BE(ON) SATURATION VOLTAGE (V)