X-On Electronics has gained recognition as a prominent supplier of MMSTA56Q-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMSTA56Q-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMSTA56Q-7-F Diodes Incorporated

MMSTA56Q-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMSTA56Q-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT General Purpose Transistor
Datasheet: MMSTA56Q-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.22 ea
Line Total: USD 0.22 
Availability - 6745
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 MMSTA56Q-7-F More Buying Options & Price Grid(s)

Availability Price Quantity
6745
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.22
10 : USD 0.1529
100 : USD 0.0792
1000 : USD 0.0583
3000 : USD 0.0462

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMSTA56Q-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMSTA56Q-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

MMSTA56Q 80V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT323 stringent requirements of Automotive Applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 BVCEO > -80V Weight: 0.006 grams (Approximate) I = -500mA Collector Current C Epitaxial Planar Die Construction Ultra-Small Surface Mount Package Complementary NPN Type: MMSTA06Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) C SOT323 B E Top View Device Symbol Pin-out Top View Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MMSTA56Q-7-F Automotive K2G 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMSTA56Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage -80 V V CEO Emitter-Base Voltage -4 V V EBO Collector Current -500 mA I C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient (Note 6) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information 2 of 5 MMSTA56Q November 2016 Diodes Incorporated www.diodes.com Document number: DS39258 Rev. 1 - 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
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Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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