MMSTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 C Complementary NPN Type Available (MMSTA42) Dim Min Max Ideal for Low Power Amplification and Switching A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C B 1.15 1.35 Gree Device (Notes 3 and 4) BE C 2.00 2.20 Mechanical Data G D 0.65 Nominal H Case: SOT-323 E 0.30 0.40 Case Material: Molded Plastic,Gree Molding G 1.20 1.40 K Compound, Note 4. UL Flammability Classification M H 1.80 2.20 Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C J 0.0 0.10 J D E L Terminal Connections: See Diagram K 0.90 1.00 C Terminals: Solderable per MIL-STD-202, Method 208 L 0.25 0.40 Lead Free Plating (Matte Tin Finish annealed over M 0.10 0.18 Alloy 42 leadframe). Marking Information: See Page 3 0 8 Ordering Information: See Page 3 All Dimensions in mm B E Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -300 V CBO Collector-Emitter Voltage V -300 V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current (Note 1) -100 mA I C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) 625 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V -300 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -300 V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -100A, I = 0 (BR)EBO E C Collector Cutoff Current I -250 nA V = -200V, I = 0 CBO CB E Collector Cutoff Current -100 nA I V = -3.0V, I = 0 EBO CE C ON CHARACTERISTICS (Note 5) 25 I = -1.0mA, V = -10V C CE DC Current Gain h 40 I = -10mA, V = -10V FE C CE 25 I = -30mA, V = -10V C CE Collector-Emitter Saturation Voltage V -0.5 V I = -20mA, I = -2.0mA CE(SAT) C B Base-Emitter Saturation Voltage V -0.9 V I = -20mA, I = -2.0mA BE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 6.0 pF C V = -20V, f = 1.0MHz, I = 0 cb CB E V = -20V, I = -10mA, CE C Current Gain-Bandwidth Product f 50 MHz T f = 100MHz Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 200 1.0 Note 1 0.9 I C = 10 I B 0.8 150 0.7 0.6 100 0.5 0.4 T = 150C 0.3 A 50 0.2 T = 25C A 0.1 T = -50C A 0 0 0 25 50 100 125 150 175 200 75 110 100 1,000 T , AMBIENT TEMPERATURE (C) A I , COLLECTOR CURRENT (mA) C Fig. 1, Max Power Dissipation vs. Ambient Temperature Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 10,000 1.0 V = 5V CE 0.9 T = -50C A 0.8 1,000 0.7 T = 25C A 0.6 100 0.5 T = 150C A 0.4 10 0.3 0.2 0.1 1 10 1,000 0.1 110 100 1 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4, Base Emitter Voltage vs. Collector Current Fig. 3, DC Current Gain vs. Collector Current 100 V = 5V CE 10 1 1 10 I , COLLECTOR CURRENT (mA) C Fig. 5, Gain Bandwidth Product vs. Collector Current MMSTA92 DS30174 Rev. 9 - 2 2 of 3 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D h, DC CURRENT GAIN f, GAIN BANDWIDTH PRODUCT (MHz) FE T V, COLLECTOR TO EMITTER CE(SAT) V , BASE EMITTER VOLTAGE (V) SATURATION VOLTAGE (V) BE(ON)