MSB30KH
Green
3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Product Summary (@T = +25C) Features and Benefits
A
V (V) I (A) V (V) I (A) Glass Passivated Die Construction
RRM O F R
Compact, Thin Profile Package Design
800 3.0 1.1 5
Reliable Robust Construction
Ideal for SMT Manufacturing
Rated at 1000V PRV
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications
Mechanical Data
Suitable for AC to DC bridge full wave rectification for SMPS, LED
lighting, adapter, battery charger, home appliances, office equipment,
Case: MSBL
and telecommunication applications.
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
e3
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 0.216 grams (Approximate)
Pin Diagram
Top View Internal Schematic
Ordering Information (Note 4)
Part Number Compliance Case Packaging
MSB30KH-13 Commercial MSBL 2500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
MSB30KH
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
V
Peak Repetitive Reverse Voltage RRM
Working Peak Reverse Voltage 800 V
V
RWM
DC Blocking Voltage
V
R
RMS Reverse Voltage V 560 V
R(RMS)
Average Rectified Output Current @ T = +110C I 3.0 A
C O
Non-Repetitive Peak Forward Surge Current, 8.3ms
I 110 A
FSM
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Peak Forward Surge Current, 1.0ms
220 A
I
FSM
Single Half Sine-Wave Superimposed on Rated Load
2 2
I t 50.21 A S
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Ambient (Note 5)
R 29 C/W
JA
(per element)
Typical Thermal Resistance, Junction to Case R 11 C/W
JC
Typical Thermal Resistance, Junction to Lead R 12 C/W
JL
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
1000
Reverse Breakdown Voltage (Note 6) V V I = 5A
(BR)R R
I = 1.5A, T = +25C
F A
0.87 1.02
0.75 I = 1.5A, T = +125C
F A
Forward Voltage (per element) V
VF
0.93 1.1
I = 3.0A, T = +25C
F A
0.82
I = 3.0A, T = +125C
F A
0.4 5 V = 800V, T = +25C
R A
Leakage Current (Note 6) (per element) I A
R
500
60
V = 800V, T = +125C
R A
45
Total Capacitance (Note 7) C pF V = 4V, f = 1.0MHz
T R
Notes: 5. Device mounted on Unit mounted on 15mm*15mm*1.6mm AL pad attach 50mm*50mm*1mm copper plate heatsink.
6. Short duration pulse test used to minimize self-heating effect.
7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2 of 5
November 2016
MSB30KH
Diodes Incorporated
www.diodes.com
Document number: DS38890 Rev. 3 - 2