SOT89 NPN SILICON PLANAR SXTA42 HIGH VOLTAGE TRANSISTOR ISSUE 3 JANUARY 1996 COMPLEMENTARY TYPE SXTA92 C PARTMARKING DETAIL SID E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 300 V CBO Collector-Emitter Voltage V 300 V CEO Emitter-Base Voltage V 6V EBO Continuous Collector Current I 500 mA C Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature Range T :T -65 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 300 V I =100A, I =0 (BR)CBO C E Breakdown Voltage Collector-Emitter V 300 V I =1mA, I =0* (BR)CEO C B Breakdown Voltage Emitter-Base V6V I =100A, I =0 (BR)EBO E C Breakdown Voltage Collector Cut-Off I 0.1 A V =200V, I =0 CBO CB E Current Emitter Cut-Off Current I 0.1 V =6V, I =0 A EBO EB C Collector-Emitter V 0.5 V I =20mA, I =2mA* CE(sat) C B Saturation Voltage Base-Emitter V 0.9 V I =20mA, I =2mA* BE(sat) C B Saturation Voltage Static Forward Current h 25 I =1mA, V =10V* FE C CE Transfer Ratio 40 I =10mA, V =10V* C CE 40 I =30mA, V =10V* C CE Transition f 50 MHz I =10mA, V =20V T C CE Frequency f=20MHz Output Capacitance C 6pF V =20V, f=1MHz obo CB *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 306