ZDT6702TA Diodes Incorporated

SM-8 COMPLEMENTARY MEDIUM POWER ZDT6702 DARLINGTON TRANSISTORS ISSUE 2 February 1997 C 1 B1 NPN C1 E 1 C2 B 2 PNP C 2 E 2 SM-8 PARTMARKING DETAIL T6702 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage V 80 -80 V CBO Collector-Emitter Voltage V 60 -60 V CEO Emitter-Base Voltage V 10 -10 V EBO Peak Pulse Current I 4-4 A CM Continuous Collector Current I 1.75 -1.75 A C Operating and Storage Temperature T :T -55 to +150 C j stg Range THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at T = 25C* P amb tot Any single die on 2.25 W Both die on equally 2.75 W Derate above 25C* Any single die on 18 mW/ C Both die on equally 22 mW/ C Thermal Resistance - Junction to Ambient* Any single die on 55.6 C/ W Both die on equally 45.5 C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.ZDT6702 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 80 200 V I =100A (BR)CBO C Breakdown Voltage Collector-Emitter V 60 100 V I =10mA* (BR)CEO C Breakdown Voltage Emitter-Base V 10 15 V I =100A (BR)EBO E Breakdown Voltage Collector Cutoff I 0.5 10 nA V =60V CBO CB Current 10 V =60V,T =100C A CB amb Emitter Cutoff Current I 0.1 10 nA V =8V EBO EB Colllector-Emitter I 50 500 nA V =60V CES CE Cutoff Current Collector-Emitter V 0.83 0.95 V I =0.5A, I =0.5mA* CE(sat) C B Saturation Voltage 1.0 1.28 V I =1.75A, I =2mA* C B Base-Emitter V 1.68 1.85 V I =1.75A, I =2mA* BE(sat) C B Saturation Voltage Base-Emitter V 1.55 1.75 V I =1.75A, V =5V* BE(on) C CE Turn-On Voltage Static Forward h 5K 13K I =10mA, V =5V FE C CE Current Transfer Ratio 5K 13K I =500mA, V =5V C CE 3.5K 9K I =2A, V =5V C CE 0.5K 2K I =4A, V =5V* C CE Transition Frequency f 140 MHz I =100mA, V =10V T C CE f=100MHz Input Capacitance C 70 pF V =500mV, f=1MHz ibo EB Output Capacitance C 15 pF V =10V, f=1MHz obo CB Switching Times t 0.5 s I =500mA, V =10V on C CE I =I =0.5mA B1 B2 t 2.1 s off *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%