SM-8 COMPLEMENTARY MEDIUM POWER ZDT6718 HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 C 1 B 1 NPN C 1 E1 C B 2 2 PNP C2 E 2 SM-8 PARTMARKING DETAIL T6718 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage V 20 -20 V CBO Collector-Emitter Voltage V 20 -20 V CEO Emitter-Base Voltage V 5-5 V EBO Peak Pulse Current I 6-6 A CM Continuous Collector Current I 2-1.5 A C Operating and Storage Temperature T :T -55 to +150 C j stg Range THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at T = 25C* P amb tot Any single die on 2 W Both die on equally 2.5 W Derate above 25C* Any single die on 16 mW/ C Both die on equally 20 mW/ C Thermal Resistance - Junction to Ambient* Any single die on 62.5 C/ W Both die on equally 50 C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 372ZDT6718 ZDT6718 PNP TRANSISTOR NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). ELECTRICAL CHARACTERISTICS (at T = 25C). amb amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -20 -65 V Collector-Base V 20 100 V I =100A I =-100A (BR)CBO (BR)CBO C C Breakdown Voltage Breakdown Voltage Collector-Emitter V 20 27 V I =10mA* Collector-Emitter V -20 -55 V I =-10mA* (BR)CEO C (BR)CEO C Breakdown Voltage Breakdown Voltage Emitter-Base V 58.3 V Emitter-Base V -5 -8.8 V I =-100A I =100A (BR)EBO (BR)EBO E E Breakdown Voltage Breakdown Voltage Collector Cutoff I -100 nA V =-15V Collector Cutoff I 100 nA V =16V CBO CB CBO CB Current Current Emitter Cutoff I -100 nA V =-4V Emitter Cutoff Current I 100 nA V =4V EBO EB EBO EB Current Collector Emitter I 100 nA V =16V CES CES Collector Emitter I -100 nA V =-15V Cutoff Current CES CES Cutoff Current Collector-Emitter V 7 15 mV I =0.1A, I =10mA* CE(sat) C B Saturation Voltage 70 150 mV I =1A, I =10mA* Collector-Emitter V -16 -40 mV I =-0.1A, I =-10mA* C B CE(SAT) C B Saturation Voltage -130 -200 mV I =-1A, I =-20mA* 130 200 mV I =2.5A, I =50mA* C B C B -145 -220 mV I =-1.5A, I =-50mA* C B Base-Emitter V 0.89 1.0 V I =2.5A, I =50mA* BE(sat) C B Base-Emitter V -0.87 -1.0 V I =-1.5A, I =-50mA* Saturation Voltage BE(SAT) C B Saturation Voltage Base-Emitter Turn-On V 0.79 1.0 V I =2.5A, V =2V* BE(on) C CE Voltage Base-Emitter V -0.81 -1.0 V I =-2A, V =-2V* BE(ON) C CE Turn-On Voltage Static Forward h 200 400 I =10mA, V =2V* FE C CE Current Transfer 300 450 I =200mA, V =2V* Static Forward h 300 475 I =-10mA, V =-2V* C CE FE C CE Current Transfer 300 450 I =-100mA, V =-2V* Ratio 200 360 I =2A, V =2V* C CE C CE 100 180 I =6A, V =2V* Ratio 150 230 I =-2A, V =-2V* C CE C CE 50 70 I =-4A, V =-2V* C CE 15 30 I =-6A, V =-2V* C CE Transition f 100 140 MHz I =50mA, V =10V T C CE Frequency f=100MHz Transition f 150 180 MHz I =-50mA, V =-10V T C CE Frequency f=100MHz Output Capacitance C 23 30 pF V =10V, f=1MHz obo CB Output Capacitance C 21 30 pF V =-10V, f=1MHz obo CB Turn-On Time t 170 V =10V, I =1A on CC C I =-I =10mA B1 B2 Turn-On Time t 40 V =-10V, I =-1A on CC C Turn-Off Time t 400 off I =I =20mA B1 B2 Turn-Off Time t 670 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% off For typical characteristics graphs see SuperSOT FMMT618 datasheet. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see SuperSOT FMMT718 datasheet. 3 - 373 3 - 374