SM-8 DUAL PNP MEDIUM POWER ZDT749 TRANSISTORS ISSUE 1 - NOVEMBER 1995 C 1 B1 C 1 E1 C B 2 2 C2 E 2 SM-8 PARTMARKING DETAIL T749 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -35 V CBO Collector-Emitter Voltage V -25 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -6 A CM Continuous Collector Current I -2 A C Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at T = 25C* P amb tot Any single die on 2.25 W Both die on equally 2.75 W Derate above 25C* Any single die on 18 mW/ C Both die on equally 22 mW/ C Thermal Resistance - Junction to Ambient* Any single die on 55.6 C/ W Both die on equally 45.5 C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 351 V - (Volts) h - Gain V - (Volts) V - (Volts) Switching time ZDT749 ZDT749 TYPICAL CHARACTERISTICS td ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). tr amb tf 1.8 IB1=IB2=IC/10 ns PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. VCE =-10V 1.6 160 ts 1.4 140 ns Collector-Base V -35 V I =-100A, I =0 1200 (BR)CBO C E 1.2 120 ts Breakdown Voltage 1.0 1 000 100 tf 80 0.8 Collector-Emitter V -25 V I =-10mA, I =0* (BR)CEO C B 600 60 0.6 C B Breakdown Voltage I /I =100 40 0.4 td tr 0.2 200 20 Emitter-Base V -5 V I =-100A, I =0 (BR)EBO E C IC/IB =10 0 0 Breakdown Voltage 0.001 0.01 0.1 1 10 0.01 0.1 1 Collector Cutoff I -0.1 V =-30V A CBO CB IC - Collector Current (Amps) IC - Collector Current (Amps) Current -10 A V =-30V,T =100C CB amb VCE(sat) v IC Switching Speeds Emitter Cutoff Current I -0.1 A V =-4V, I =0 EBO EB E Collector-Emitter V -0.12 -0.3 V I =1A, I =-100mA* CE(sat) C B 1.2 Saturation Voltage -0.23 -0.5 V I =2A, I =-200mA* C B 200 1.0 Base-Emitter V -0.9 -1.25 V I =1A, I =-100mA* BE(sat) C B Saturation Voltage VCE =2V 160 IC/IB =10 0.8 Base-Emitter V -0.8 -1 V I =-1A, V =-2V* BE(on) C CE 120 Turn-On Voltage 0.6 IC/IB =100 80 Static Forward Current h 70 200 I =-50mA, V =-2V* FE C CE 0.4 Transfer Ratio 100 200 300 I =-1A, V =-2V* C CE 40 75 150 I =-2A, V =-2V* C CE 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 15 50 I =-6A, V =-2V* C CE IC - Collector Current (Amps) IC - Collector Current (Amps) Transition Frequency f 100 160 MHz I =-100mA, V =-5V T C CE hFE v IC VBE(sat) v IC f=100MHz Output Capacitance C 55 100 pF V =-10V f=1MHz obo CB 1.2 Switching Times t 40 ns I =-500mA, V =-10V on C CC 1.0 I =I =-50mA B1 B2 VCE=2V t 450 ns off 0.8 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 0.6 0.4 0.001 0.01 0.1 1 10 C Collector Current (Amps) I - VBE(on) v IC 3 - 352 3 - 353