SM-8 DUAL PNP MEDIUM POWER ZDT751 TRANSISTORS ISSUE 1 - AUGUST 1997 C 1 B1 C E 1 1 C2 B 2 C 2 E 2 SM-8 PARTMARKING DETAIL T751 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -6 A CM Continuous Collector Current I -2 A C Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at T = 25C* P amb tot Any single die on 2.25 W Both die on equally 2.75 W Derate above 25C* Any single die on 18 mW/ C Both die on equally 22 mW/ C Thermal Resistance - Junction to Ambient* Any single die on 55.6 C/ W Both die on equally 45.5 C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstrae 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in D-81673 Mnchen Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong Zetex plc 1997 Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Internet: Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 ZDT751 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -80 V I =-100A, I =0 (BR)CBO C E Breakdown Voltage Collector-Emitter V -60 V I =-10mA, I =0* (BR)CEO C B Breakdown Voltage Emitter-Base V -5 V I =-100A, I =0 (BR)EBO E C Breakdown Voltage Collector Cutoff I -0.1 A V =-60V CBO CB Current -10 A V =-60V,T =100C CB amb Emitter Cutoff Current I -0.1 A V =-4V, I =0 EBO EB E Collector-Emitter V -0.15 -0.3 V I =1A, I =-100mA* CE(sat) C B Saturation Voltage -0.28 -0.5 V I =2A, I =-200mA* C B Base-Emitter V -0.9 -1.25 V I =1A, I =-100mA* BE(sat) C B Saturation Voltage Base-Emitter V -0.8 -1 V I =-1A, V =-2V* BE(on) C CE Turn-On Voltage Static Forward Current h 70 200 I =-50mA, V =-2V* FE C CE Transfer Ratio 100 200 300 I =-500mA, V =-2V* C CE 80 170 I =-1A, V =-2V* C CE 40 80 I =-2A, V =-2V* C CE Transition Frequency f 100 140 MHz I =-100mA, V =-5V T C CE f=100MHz Output Capacitance C 30 pF V =-10V f=1MHz obo CB Switching Times t 40 ns I =-500mA, V =-10V on C CC I =I =-50mA B1 B2 t 450 ns off *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%