SM-8 DUAL PNP MEDIUM POWER ZDT795A TRANSISTORS ISSUE 1 - JULY 1999 C1 B 1 C 1 E 1 C 2 B 2 C 2 E 2 SM-8 PARTMARKING DETAIL T795A (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -140 V CBO Collector-Emitter Voltage V -140 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -1 A CM Continuous Collector Current I -0.5 A C Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at T = 25C* P amb tot Any single die on 2.25 W Both die on equally 2.75 W Derate above 25C* Any single die on 18 mW/ C Both die on equally 22 mW/ C Thermal Resistance - Junction to Ambient* Any single die on 55.6 C/ W Both die on equally 45.5 C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.ZDT795A ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -140 V I =-100 A, I =0 (BR)CBO C E Breakdown Voltage Collector-Emitter V -140 V I =-10mA, I =0* (BR)CEO C B Breakdown Voltage Emitter-Base V -5 V I =-100 A, I =0 (BR)EBO E C Breakdown Voltage Collector Cutoff I -0.1 A V =-100V CBO CB Current Emitter Cutoff Current I -0.1 V =-4V, I =0 A EBO EB E Collector-Emitter V -0.3 V I =-100mA, I =-1mA* CE(sat) C B Saturation Voltage -0.3 V I =-200mA, I =-5mA* C B -0.25 V I =-500mA, I =-50mA* C B Base-Emitter V -0.95 V I =-500mA, I =-50mA* BE(sat) C B Saturation Voltage Base-Emitter V -0.75 V I =-500mA, V =-2V* BE(on) C CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-2V* FE C CE Transfer Ratio 250 I =-200mA, V =-2V* C CE 100 I =-300mA, V =-2V* C CE Transition Frequency f 100 MHz I =-50mA, V =-5V T C CE f=50MHz Output Capacitance C 15 pF V =-10V f=1MHz obo CB Switching Times t 100 ns I =-100mA, V =-50V on C CC I =I =-10mA B1 B2 t 1900 ns off *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%