SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 (8 LEAD SOT223) PARTMARKING DETAIL ZHB6790 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPNs PNPs UNIT Collector-Base Voltage V 50 -50 V CBO Collector-Emitter Voltage V 40 -40 V CEO Emitter-Base Voltage V 5-5 V EBO Peak Pulse Current I 6-6 A CM Continuous Collector Current I 2-2 A C Operating and Storage Temperature Range T :T -55 to +150 C j stg SCHEMATIC DIAGRAM CONNECTION DIAGRAM E1, E4 C C 1, 2 B1 E1,E4 B1 B4 Q1 Q4 B2 C3,C4 E ,E 2 3 C1, C2 B 4 B 3 C3, C4 B2 Q2 Q3 B3 E2, E3 5 7 6 8 2 3 4 1ZHB6790 THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at T = 25C* P amb tot Any single transistor on 1.25 W Q1 and Q3 on or Q2 and Q4 on equally 2 W Derate above 25C* Any single transistor on 10 mW/ C Q1 and Q3 on or Q2 and Q4 on equally 16 mW/ C Thermal Resistance - Junction to Ambient* Any single transistor on 100 C/ W Q1 and Q3 on or Q2 and Q4 on equally 62.5 C/ W 100 60 D=t1 t1 D=t1 t1 tP 80 tP 50 tP tP 40 60 D= 1 30 D=0.5 40 D=1 D=0.2 D=0.5 20 D=0.1 D=0.2 D= 0.05 20 D=0.1 Single Pulse 10 D=0.05 Single Pulse 0 0 100us 1ms 10ms 100ms 1s 10s 100s 100us 1ms 10ms 100ms 1s 10s 100s Pulse Width Pulse Width Transient Thermal Resistance Transient Thermal Resistance Single TransistorO Q1 and Q3 or Q2 and Q4O 10 2.0 1.5 Dual Transistors Single Transi stor 1 Full Coppe r Dual Transistors 1.0 Minimum Single Transistor Copper 0.5 0.1 0 0.1 110 020 40 60 80 100 120 140 160 Pcb Area (inches squared) T - Temperature (C) Pd v Pcb Area Comparison Derating curve * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.Two devices o is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs rurned on.