X-On Electronics has gained recognition as a prominent supplier of ZTD09N50DE6QTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZTD09N50DE6QTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZTD09N50DE6QTA Diodes Incorporated

ZTD09N50DE6QTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZTD09N50DE6QTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 50V Dual NPN Low Sat 1A 7V Vebo
Datasheet: ZTD09N50DE6QTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0797 ea
Line Total: USD 1.08

Availability - 945
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
839
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 1.0465
10 : USD 0.92
100 : USD 0.6279
500 : USD 0.5244
1000 : USD 0.4462
3000 : USD 0.3968
6000 : USD 0.376
9000 : USD 0.3485
24000 : USD 0.345

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZTD09N50DE6QTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZTD09N50DE6QTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated ZXTD09N50DE6 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BV > 50V Case: SOT26 CEO I = 1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound C High Gain UL Flammability Classification Rating 94V-0 R = 160m for Low Equivalent On Resistance Moisture Sensitivity: Level 1 per J-STD-020 SAT Low Saturation Voltage V < -270mV 1A Terminals: Finish Matte Tin Plated Leads Solderable per CE(sat) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.015 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications LCD Backlighting Inverter Circuits Boost Functions in DC-DC Converters SOT26 C1 B1 E1 E2 C2 B2 Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTD09N50DE6TA AEC-Q101 D619 7 8 3,000 ZTD09N50DE6QTA Automotive D619 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZXTD09N50DE6 Absolute Maximum Ratings Q1 & Q2 Common ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 50 V V CBO Collector-Emitter Voltage 50 V V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 1 A I C Peak Pulse Current I 2 A CM Base Current I 200 mA B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.7 (Notes 6 & 10) 5.6 0.9 (Notes 7 & 10) 7.2 Power Dissipation 1.1 W (Notes 7 & 11) P D Linear Derating Factor 8.8 mW/C 1.1 (Notes 8 & 10) 8.8 1.7 (Notes 9 & 10) 13.6 (Notes 6 & 10) 179 (Notes 7 & 10) 139 Thermal Resistance, Junction to Ambient (Notes 7 & 11) 113 R JA C/W (Notes 8 & 10) 113 (Notes 9 & 10) 73 Thermal Resistance, Junction to Lead (Note 12) 95.50 R JL Operating and Storage Temperature Range -55 to +150 C T , T J STG ESD Ratings (Note 13) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as Note 6, except the device is surface mounted on 25mm x 25mm 1oz copper. 8. Same as Note 6, except the device is surface mounted on 50mm x 50mm 2oz copper. 9. Same as Note 8, except the device is measured at t < 5 seconds. 10. For device with one active die, both collectors attached to a common heatsink. 11. For device with two active dice running at equal power, split heatsink 50% to each collector. 12. Thermal resistance from junction to solder-point (at the end of the collector lead). 13. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTD09N50DE6 May 2015 Diodes Incorporated www.diodes.com Document number DS33650 Rev. 6 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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