Max Power Dissipation - (Watts) Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX1048A ZTX1048A HIGH GAIN TRANSISTOR ISSUE 3 FEBRUARY 1995 FEATURES *V =50V CEV * Very Low Saturation Voltages 1.0 180 *High Gain D=1(D.C) 160 t1 * 20 Amps pulse current 140 0.75 APPLICATIONS C D=t1 tp B 120 tp * LCD Backlight Convertors E 100 D= 0.5 * Emergency Lighting 0.50 80 E-Line D=0.2 * DC-DC Convertors TO92 Compatible 60 D=0.1 D=0.05 0.25 40 ABSOLUTE MAXIMUM RATINGS. Single Pulse 20 PARAMETER SYMBOL ZTX1048A UNIT 0 1ms 10ms 100ms 1s -40 0 40 80 120 160 200 0.1ms 10s 100s Collector-Base Voltage V 50 V Pulse Width T -Temperature (C) CBO Collector-Emitter Voltage V 17.5 V Transient Thermal Resistance Derating curve CEO Emitter-Base Voltage V 5V EBO SPICE PARAMETERS Peak Pulse Current I 20 A CM *ZETEX ZTX1048A Spice model Last revision 20/01/95 Continuous Collector Current I 4A C * Base Current I 500 mA B .MODEL ZTX1048A NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15 Power Dissipation at T =25C P 1W amb tot + ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010 Operating and Storage Temperature T :T -55 to +200 C j stg + CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299 Range + VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9 * 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstrae 19 87 Modular Avenue 3510 Metroplaza, Tower 2 agents and distributors in D-81673 Mnchen Commack NY11725 Hing Fong Road, Kwai Fong major countries world-wide Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Zetex plc 1995 Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.NPN SILICON PLANAR MEDIUM POWER ZTX1048A ZTX1048A HIGH GAIN TRANSISTOR ISSUE 2 - JANUARY 1995 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb ZTX1048A PARAMETER SYMBOL UNIT CONDITIONS. MIN. TYP. MAX. Full characterised data now available Collector-Base Breakdown V 50 85 V I =100A C (BR)CBO C B Voltage E Collector-Emitter V 50 85 V IC=100A CES E-Line Breakdown Voltage TO92 Compatible Collector-Emitter V 17.5 24 V IC=10mA CEO ABSOLUTE MAXIMUM RATINGS. Breakdown Voltage PARAMETER SYMBOL ZTX1048A UNIT Collector-Emitter V 50 85 V IC=100A, V =1V CEV EB Collector-Base Voltage V 50 V Breakdown Voltage CBO Collector-Emitter Voltage V 17.5 V Emitter-Base Breakdown V 58.7 V I =100A (BR)EBO E CEO Voltage Emitter-Base Voltage V 5V EBO Collector Cut-Off Current I 0.3 10 nA V =35V CBO CB Peak Pulse Current I 20 A CM Emitter Cut-Off Current I 0.3 10 nA V =4V EBO EB Continuous Collector Current I 4A C Collector Emitter Cut-Off I 0.3 10 nA VCES=35V CES Base Current I 500 mA Current B Power Dissipation at T =25C P 1W Collector-Emitter Saturation V 27 45 mV I =0.5A, I =10mA* CE(sat) C B amb tot Voltage 55 75 mV I =1A, I =10mA* C B Operating and Storage Temperature T :T -55 to +200 C 110 150 mV I =2A, I =10mA* C B j stg Range 210 245 mV I =4A, I =20mA* C B Base-Emitter V 860 950 mV I =4A, I =20mA* BE(sat) C B Saturation Voltage Base-Emitter Turn-On V 860 950 mV IC=4A, V =2V* BE(on) CE Voltage Static Forward Current h 280 440 I =10mA, V =2V* FE C CE Transfer Ratio 300 450 I =0.5A, V =2V* C CE 300 450 1200 I =1A, V =2V* C CE 220 330 I =4A, V =2V* C CE 50 80 I =20A, V =2V* C CE Transition Frequency f 150 MHz I =50mA, V =10V T C CE f=50MHz Output Capacitance C 60 80 pF V =10V, f=1MHz obo CB t 130 ns I =4A, I =40mA, V =10V on C B CC Switching Times t 180 ns I =4A, I =40mA, V =10V off C B CC 3-338 3-337