Max Power Dissipation - (Watts) Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX1051A ZTX1051A HIGH GAIN TRANSISTOR ISSUE 3 FEBRUARY 95 FEATURES *B =150V CEV * Very Low Saturation Voltage 1.0 180 *High Gain D=1(D.C) 160 t1 * Inherently Low Noise 140 0.75 APPLICATIONS C D=t1 tp B 120 tp * Emergency Lighting E 100 D= 0.5 * Low Noise Audio 0.50 80 E-Line D=0.2 TO92 Compatible 60 D=0.1 D=0.05 0.25 40 ABSOLUTE MAXIMUM RATINGS. Single Pulse 20 PARAMETER SYMBOL VALUE UNIT 0 1ms 10ms 100ms 1s -40 0 40 80 120 160 200 0.1ms 10s 100s Collector-Base Voltage V 150 V Pulse Width T -Temperature (C) CBO Collector-Emitter Voltage V 40 V Transient Thermal Resistance Derating curve CEO Emitter-Base Voltage V 5V EBO SPICE PARAMETERS Peak Pulse Current I 10 A CM *ZETEX ZTX1051A Spice model Last revision 16/12/94 Continuous Collector Current I 4A C * Base Current I 500 mA B .MODEL ZTX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120 + ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 Power Dissipation at T =25C P 1W amb tot + ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010 Operating and Storage Temperature T :T -55 to +200 C j stg + CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357 Range + VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9 * 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstrae 19 87 Modular Avenue 3510 Metroplaza, Tower 2 agents and distributors in D-81673 Mnchen Commack NY11725 Hing Fong Road, Kwai Fong major countries world-wide Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Zetex plc 1995 Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.ZTX1051A ZTX1051A TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 0.8 0.8 +25C IC/IB=100 Collector-Base Breakdown V 150 190 V I =100A (BR)CBO C Voltage 0.6 0.6 Collector-Emitter V 150 190 V IC=100A CES IC/IB=20 IC/IB=40 Breakdown Voltage -55C 0.4 0.4 IC/IB=100 +25C +100C +175C Collector-Emitter V 40 60 V IC=10mA CEO 0.2 0.2 Breakdown Voltage Collector-Emitter V 150 190 V IC=100A, V =1V CEV EB 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Breakdown Voltage IC-Collector Current IC-Collector Current Emitter-Base Breakdown V 5 8.8 V I =100A (BR)EBO E Voltage VCE(sat) v IC VCE(sat) v IC Collector Cut-Off Current I 0.3 10 nA V =120V CBO CB Emitter Cut-Off Current I 0.3 10 nA V =4V EBO EB 1.2 CE IC/IB=100 V =2V 700 Collector Emitter Cut-Off I 0.3 10 nA VCES=120V CES 1.0 +100 C 600 Current -55 C 500 0.8 +25 C Collector-Emitter Saturation V 17 25 mV I =0.2A, I =10mA* +25 C CE(sat) C B 400 0.6 Voltage 75 110 mV I =1A, I =10mA* C B +100 C 300 165 210 mV I =4A, I =100mA* 0.4 C B -55 C +175 C 200 0.2 Base-Emitter V 920 1000 mV I =4A, I =100mA* 100 BE(sat) C B Saturation Voltage 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Base-Emitter Turn-On V 825 950 mV IC=4A, V =2V* BE(on) CE Voltage IC-Collector Current IC-Collector Current Static Forward Current h 290 440 I =10mA, V =2V* FE C CE hFE v IC VBE(sat) v Ic Transfer Ratio 300 450 1200 I =1A, V =2V* C CE 190 310 I =4A, V =2V* C CE 45 70 I =10A, V =2V* C CE Single Pulse Test Tamb=25C 10 VCE=2V Transition Frequency f 155 MHz I =50mA, V =10V T C CE 1.0 f=100MHz -55 C DC 0.8 1 1s Output Capacitance C 27 40 pF V =10V, f=1MHz obo CB 100ms +25 C 10ms 0.6 1ms t 100 ns I =4A, I =40mA, V =10V +100 C 100us on C B CC 0.4 0.1 Switching Times +175 C t 300 ns I =4A, I =40mA, V =10V off C B CC 0.2 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 0.01 10mA 100mA 1A 10A 1mA 100mV 1V 10V 100V IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area