Max Power Dissipation - (Watts) Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX1053A ZTX1053A HIGH GAIN TRANSISTOR ISSUE 3 JANUARY 1995 FEATURES *V =75V CEO * 3 Amp Continuous Current 1.0 180 * 10 Amp Pulse Current D=1(D.C) 160 t1 * Very Low Saturation Voltage 140 0.75 APPLICATIONS C D=t1 B tp 120 tp E * Automotive Switching Circuits 100 D= 0.5 * DC-DC Convertors 0.50 80 E-Line D=0.2 TO92 Compatible 60 D=0.1 D=0.05 0.25 40 ABSOLUTE MAXIMUM RATINGS. Single Pulse 20 PARAMETER SYMBOL ZTX1053A UNIT 0 1ms 10ms 100ms 1s -40 0 40 80 120 160 200 0.1ms 10s 100s Collector-Base Voltage V 150 V Pulse Width T -Temperature (C) CBO Collector-Emitter Voltage V 75 V Transient Thermal Resistance Derating curve CEO Emitter-Base Voltage V 5V EBO SPICE PARAMETERS Peak Pulse Current I 10 A CM *ZETEX ZTX1053A Spice model Last revision 19/01/95 Continuous Collector Current I 3A C * Base Current I 500 mA B .MODEL ZTX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100 + ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15 Power Dissipation at T =25C P 1W amb tot + ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016 Operating and Storage Temperature T :T -55 to +200 C j stg + CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367 Range + VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9 * 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstrae 19 87 Modular Avenue 3510 Metroplaza, Tower 2 agents and distributors in D-81673 Mnchen Commack NY11725 Hing Fong Road, Kwai Fong major countries world-wide Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Zetex plc 1995 Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ZTX1053A ZTX1053A TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 0.8 0.8 Collector-Base V 150 245 V I =100A +25C IC/IB=30 (BR)CBO C Breakdown Voltage 0.6 0.6 -55C +25C Collector-Emitter V 150 245 V IC=100A I /I =10 C B CES +100C IC/IB=30 +175C Breakdown Voltage 0.4 IC/IB=100 0.4 Collector-Emitter V 75 100 V IC=10mA CEO 0.2 0.2 Breakdown Voltage Collector-Emitter V 150 245 V IC=100A, V =1V CEV EB 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Breakdown Voltage C C Emitter-Base V 5 8.8 V I =100A I -Collector Current I -Collector Current (BR)EBO E Breakdown Voltage VCE(sat) v IC VCE(sat) v IC Collector Cut-Off Current I 0.3 10 nA V =120V CBO CB Emitter Cut-Off Current I 0.3 10 nA V =4V EBO EB 1.0 IC/IB=30 700 VCE=2V Collector Emitter Cut-Off I 0.3 10 nA VCES=120V CES +100C 600 0.8 Current +25 C -55 C 500 0.6 Collector-Emitter Saturation V 17 25 mV I =0.2A, I =20mA* +25 C CE(sat) C B 400 Voltage 120 150 mV I =1A, I =10mA* C B -55 C 300 +100C 0.4 180 250 mV I =3A, I =100mA* C B 200 +175C 0.2 Base-Emitter V 900 1000 mV I =3A, I =100mA* 100 BE(sat) C B Saturation Voltage 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Base-Emitter Turn-On V 825 950 mV IC=3A, V =2V* BE(on) CE Voltage IC-Collector Current IC-Collector Current Static Forward Current h 260 420 I =10mA, V =2V* FE C CE VBE(sat) v Ic hFE v IC Transfer Ratio 300 450 1200 I =1A, V =2V* C CE 100 150 I =3A, V =2V* C CE 15 I =10A, V =2V* C CE Single Pulse Test Tamb=25C 10 1.2 Transition Frequency f 140 MHz I =50mA, V =10V VCE=2V T C CE f=100MHz 1.0 0.8 - 55 C 1 Output Capacitance C 21 30 pF V =10V, f=1MHz obo CB DC 1s +25 C 0.6 100ms 10ms t 90 ns I =2A, I =20mA, V =50V on C B CC +100 C 1ms 0.1 Switching Times 0.4 100us +175 C t 750 ns I =2A, I =20mA, V =50V off C B CC 0.2 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 0.01 10mA 100mA 1A 10A 1V 10V 100V 1mA 0.1V IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area