h I - (A) I - (A) NPN SILICON PLANAR ZTX415 ZTX415 AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES TYPICAL CHARACTERISTICS * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) 40 * Low inductance package 180 11 1. >4x10 Operations Without Failure 7 160 2. 10 Operations To Failure APPLICATIONS 3 3. 10 Operations To Failure 140 30 * Laser LED drivers VC = 250V C 120 B * Fast edge generation E 100 * High speed pulse generators 3. 20 80 E-Line 2. VC = 200V * Suitable for single, series and parallel operation TO92 Compatible 60 40 10 ABSOLUTE MAXIMUM RATINGS. 1. 20 PARAMETER SYMBOL VALUE UNIT 0 0 Collector-Base Voltage V 260 V CBO 04200 60 80 100 120 140 160 180 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Emitter Voltage V 100 V Pulse Width (ns) Temperature (C) CEO Maximum Avalanche Current IUSB v Temperature Emitter-Base Voltage V 6V EBO v Pulse Width for the specified conditions Continuous Collector Current I 500 mA C Peak Collector Current (Pulse Width=20ns) I 60 A CM 100 220 Power Dissipation P 680 mW tot 200 80 Operating and Storage Temperature Range T :T -55 to +175 C VCE =10V j stg Risetime of Base Drive Current = 5mA/ns 175C 180 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 60 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 160 40 25C Collector-Base V 260 V I =1mA (BR)CES C 140 IB =50mA Breakdown Voltage T = -55 to +175C amb 20 -55C IB =100mA 120 Collector-Emitter V 100 V I =100A CEO(sus) C IB =200mA Breakdown Voltage 0 100 100A 1mA 10mA 100mA 1A 100p 1n 10n 100n Emitter-Base V6V I =10A (BR)EBO E Breakdown Voltage Collector Current Collector-Emitter Capacitance (F) Collector Cut-Off I 0.1 A V =180V Minimum starting voltage CBO CB hFE v IC Current 10 A V =180V, T =100C as a function of capacitance CB amb Emitter Cut-Off Current I 0.1 A V =4V EBO EB Collector-Emitter V 0.5 V I =10mA, I =1mA* 180 CE(sat) C B 160 Saturation Voltage 175 IB =60mA Base-Emitter V 0.9 V I =10mA, I =1mA* BE(sat) C B 150 170 Saturation Voltage IB =100mA 165 Current in Second I 15 A V =200V, C =620pF SB C CE 140 IB =200mA Breakdown (Pulsed) 25 A V =250V, C =620pF C CE 160 C = 620pF Static Forward Current h 25 I =10mA, V =10V* FE C CE 155 120 Transfer Ratio C=620pF 150 Transition Frequency f 40 MHz I =10mA, V =20V T C CE f=20MHz 145 100 110 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Base C 8pF V =20V, I =0 cb CB E Risetime of Base Drive (mA/ns) Temperature (C) Capacitance f=100MHz Minimum starting voltage Minimum starting voltage *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% as a function of drive current as a function of temperature 3-172 3-171 V - (V) V - (V) V - (V)h I - (A) I - (A) NPN SILICON PLANAR ZTX415 ZTX415 AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES TYPICAL CHARACTERISTICS * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) 40 * Low inductance package 180 11 1. >4x10 Operations Without Failure 7 160 2. 10 Operations To Failure APPLICATIONS 3 3. 10 Operations To Failure 140 30 * Laser LED drivers VC = 250V C 120 B * Fast edge generation E 100 * High speed pulse generators 3. 20 80 E-Line 2. VC = 200V * Suitable for single, series and parallel operation TO92 Compatible 60 40 10 ABSOLUTE MAXIMUM RATINGS. 1. 20 PARAMETER SYMBOL VALUE UNIT 0 0 Collector-Base Voltage V 260 V CBO 04200 60 80 100 120 140 160 180 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Emitter Voltage V 100 V Pulse Width (ns) Temperature (C) CEO Maximum Avalanche Current IUSB v Temperature Emitter-Base Voltage V 6V EBO v Pulse Width for the specified conditions Continuous Collector Current I 500 mA C Peak Collector Current (Pulse Width=20ns) I 60 A CM 100 220 Power Dissipation P 680 mW tot 200 80 Operating and Storage Temperature Range T :T -55 to +175 C VCE =10V j stg Risetime of Base Drive Current = 5mA/ns 175C 180 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 60 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 160 40 25C Collector-Base V 260 V I =1mA (BR)CES C 140 IB =50mA Breakdown Voltage T = -55 to +175C amb 20 -55C IB =100mA 120 Collector-Emitter V 100 V I =100A CEO(sus) C IB =200mA Breakdown Voltage 0 100 100A 1mA 10mA 100mA 1A 100p 1n 10n 100n Emitter-Base V6V I =10A (BR)EBO E Breakdown Voltage Collector Current Collector-Emitter Capacitance (F) Collector Cut-Off I 0.1 A V =180V Minimum starting voltage CBO CB hFE v IC Current 10 A V =180V, T =100C as a function of capacitance CB amb Emitter Cut-Off Current I 0.1 A V =4V EBO EB Collector-Emitter V 0.5 V I =10mA, I =1mA* 180 CE(sat) C B 160 Saturation Voltage 175 IB =60mA Base-Emitter V 0.9 V I =10mA, I =1mA* BE(sat) C B 150 170 Saturation Voltage IB =100mA 165 Current in Second I 15 A V =200V, C =620pF SB C CE 140 IB =200mA Breakdown (Pulsed) 25 A V =250V, C =620pF C CE 160 C = 620pF Static Forward Current h 25 I =10mA, V =10V* FE C CE 155 120 Transfer Ratio C=620pF 150 Transition Frequency f 40 MHz I =10mA, V =20V T C CE f=20MHz 145 100 110 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Base C 8pF V =20V, I =0 cb CB E Risetime of Base Drive (mA/ns) Temperature (C) Capacitance f=100MHz Minimum starting voltage Minimum starting voltage *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% as a function of drive current as a function of temperature 3-172 3-171 V - (V) V - (V) V - (V)