X-On Electronics has gained recognition as a prominent supplier of ZTX415 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZTX415 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZTX415 Diodes Incorporated

ZTX415 electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZTX415
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN - Avalanche Mode 100 V 500 mA 40MHz 680 mW Through Hole E-Line (TO-92 compatible)
Datasheet: ZTX415 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 16.524 ea
Line Total: USD 16.52

Availability - 707
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4492
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 8.7745
10 : USD 8.2225
25 : USD 8.2225
50 : USD 8.2225
100 : USD 7.912
1000 : USD 7.9005
4000 : USD 7.6935

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the ZTX415 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZTX415 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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h I - (A) I - (A) NPN SILICON PLANAR ZTX415 ZTX415 AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES TYPICAL CHARACTERISTICS * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) 40 * Low inductance package 180 11 1. >4x10 Operations Without Failure 7 160 2. 10 Operations To Failure APPLICATIONS 3 3. 10 Operations To Failure 140 30 * Laser LED drivers VC = 250V C 120 B * Fast edge generation E 100 * High speed pulse generators 3. 20 80 E-Line 2. VC = 200V * Suitable for single, series and parallel operation TO92 Compatible 60 40 10 ABSOLUTE MAXIMUM RATINGS. 1. 20 PARAMETER SYMBOL VALUE UNIT 0 0 Collector-Base Voltage V 260 V CBO 04200 60 80 100 120 140 160 180 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Emitter Voltage V 100 V Pulse Width (ns) Temperature (C) CEO Maximum Avalanche Current IUSB v Temperature Emitter-Base Voltage V 6V EBO v Pulse Width for the specified conditions Continuous Collector Current I 500 mA C Peak Collector Current (Pulse Width=20ns) I 60 A CM 100 220 Power Dissipation P 680 mW tot 200 80 Operating and Storage Temperature Range T :T -55 to +175 C VCE =10V j stg Risetime of Base Drive Current = 5mA/ns 175C 180 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 60 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 160 40 25C Collector-Base V 260 V I =1mA (BR)CES C 140 IB =50mA Breakdown Voltage T = -55 to +175C amb 20 -55C IB =100mA 120 Collector-Emitter V 100 V I =100A CEO(sus) C IB =200mA Breakdown Voltage 0 100 100A 1mA 10mA 100mA 1A 100p 1n 10n 100n Emitter-Base V6V I =10A (BR)EBO E Breakdown Voltage Collector Current Collector-Emitter Capacitance (F) Collector Cut-Off I 0.1 A V =180V Minimum starting voltage CBO CB hFE v IC Current 10 A V =180V, T =100C as a function of capacitance CB amb Emitter Cut-Off Current I 0.1 A V =4V EBO EB Collector-Emitter V 0.5 V I =10mA, I =1mA* 180 CE(sat) C B 160 Saturation Voltage 175 IB =60mA Base-Emitter V 0.9 V I =10mA, I =1mA* BE(sat) C B 150 170 Saturation Voltage IB =100mA 165 Current in Second I 15 A V =200V, C =620pF SB C CE 140 IB =200mA Breakdown (Pulsed) 25 A V =250V, C =620pF C CE 160 C = 620pF Static Forward Current h 25 I =10mA, V =10V* FE C CE 155 120 Transfer Ratio C=620pF 150 Transition Frequency f 40 MHz I =10mA, V =20V T C CE f=20MHz 145 100 110 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Base C 8pF V =20V, I =0 cb CB E Risetime of Base Drive (mA/ns) Temperature (C) Capacitance f=100MHz Minimum starting voltage Minimum starting voltage *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% as a function of drive current as a function of temperature 3-172 3-171 V - (V) V - (V) V - (V)h I - (A) I - (A) NPN SILICON PLANAR ZTX415 ZTX415 AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES TYPICAL CHARACTERISTICS * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) 40 * Low inductance package 180 11 1. >4x10 Operations Without Failure 7 160 2. 10 Operations To Failure APPLICATIONS 3 3. 10 Operations To Failure 140 30 * Laser LED drivers VC = 250V C 120 B * Fast edge generation E 100 * High speed pulse generators 3. 20 80 E-Line 2. VC = 200V * Suitable for single, series and parallel operation TO92 Compatible 60 40 10 ABSOLUTE MAXIMUM RATINGS. 1. 20 PARAMETER SYMBOL VALUE UNIT 0 0 Collector-Base Voltage V 260 V CBO 04200 60 80 100 120 140 160 180 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Emitter Voltage V 100 V Pulse Width (ns) Temperature (C) CEO Maximum Avalanche Current IUSB v Temperature Emitter-Base Voltage V 6V EBO v Pulse Width for the specified conditions Continuous Collector Current I 500 mA C Peak Collector Current (Pulse Width=20ns) I 60 A CM 100 220 Power Dissipation P 680 mW tot 200 80 Operating and Storage Temperature Range T :T -55 to +175 C VCE =10V j stg Risetime of Base Drive Current = 5mA/ns 175C 180 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 60 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 160 40 25C Collector-Base V 260 V I =1mA (BR)CES C 140 IB =50mA Breakdown Voltage T = -55 to +175C amb 20 -55C IB =100mA 120 Collector-Emitter V 100 V I =100A CEO(sus) C IB =200mA Breakdown Voltage 0 100 100A 1mA 10mA 100mA 1A 100p 1n 10n 100n Emitter-Base V6V I =10A (BR)EBO E Breakdown Voltage Collector Current Collector-Emitter Capacitance (F) Collector Cut-Off I 0.1 A V =180V Minimum starting voltage CBO CB hFE v IC Current 10 A V =180V, T =100C as a function of capacitance CB amb Emitter Cut-Off Current I 0.1 A V =4V EBO EB Collector-Emitter V 0.5 V I =10mA, I =1mA* 180 CE(sat) C B 160 Saturation Voltage 175 IB =60mA Base-Emitter V 0.9 V I =10mA, I =1mA* BE(sat) C B 150 170 Saturation Voltage IB =100mA 165 Current in Second I 15 A V =200V, C =620pF SB C CE 140 IB =200mA Breakdown (Pulsed) 25 A V =250V, C =620pF C CE 160 C = 620pF Static Forward Current h 25 I =10mA, V =10V* FE C CE 155 120 Transfer Ratio C=620pF 150 Transition Frequency f 40 MHz I =10mA, V =20V T C CE f=20MHz 145 100 110 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Base C 8pF V =20V, I =0 cb CB E Risetime of Base Drive (mA/ns) Temperature (C) Capacitance f=100MHz Minimum starting voltage Minimum starting voltage *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% as a function of drive current as a function of temperature 3-172 3-171 V - (V) V - (V) V - (V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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