ZTX415
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Features Mechanical Data
Avalanche Transistor Case: E-Line
60A Peak Avalanche Current (Pulse Width = 20ns)
Case Material: Molded Plastic. Green Molding Compound. UL
BV > 260V
CES Flammability Rating 94V-0
BV > 100V
CEO
Moisture Sensitivity: Level 1 per J-STD-020
Specifically Designed for Avalanche Mode Operation
Terminals: Finish Matte Tin Plated Leads. Solderable per MIL-
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
STD-202, Method 208
Halogen and Antimony Free. Green Device (Note 3)
Weight: 159mg (Approximate)
C
B
E
Top View
E-Line
Device Symbol
Pin-Out
Ordering Information (Note 4)
Part Number Compliance Marking Quantity
ZTX415 Standard ZTX415 4000 Bulk
ZTX415STZ Standard ZTX415 2000 Taped
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
ZTX415
Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage V 260 V
CBO
Collector-Emitter Voltage V 260 V
CES
Collector-Emitter Voltage V 100 V
CEO
Emitter-Base Voltage V 6 V
EBO
Continuous Collector Current I 500 mA
C
Peak Collector Current (Pulse Width = 20ns) 60 A
ICM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P 680 mW
D
Thermal Resistance, Junction to Ambient (Note 5) R 250 C/W
JA
Thermal Resistance, Junction to Lead (Note 6) R 197 C/W
JL
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
I = 1mA
C
Collector-Emitter Breakdown Voltage BV 260 V
CES
T = -55 to +150C
J
Collector-Emitter Breakdown Voltage (Note 8) BV 100 V I = 100A
CEO C
Emitter-Base Breakdown Voltage BV 6 V I = 100A
EBO E
V = 180V
100 CB
nA
Collector Cutoff Current I
CBO
10 A
V = 180V, T = +100C
CB J
Emitter Cutoff Current I 100 nA V = 4V
EBO EB
Static Forward Current Transfer Ratio (Note 8) h 25 I = 10mA, V = 10V
FE C CE
Collector-Emitter Saturation Voltage (Note 8) V 500 mV I = 10mA, I = 1mA
CE(sat) C B
Base-Emitter Saturation Voltage (Note 8) V 900 mV I = 10mA, I = 1mA
BE(sat) C B
V = 200V, C = 620pF
25 A C CE
Pulsed Current in Second Breakdown I
USB
35 A
V = 250V, C = 620pF
C CE
Collector-Emitter inductance 2.5 nH Standard SOT23 Leads
L
ce
V = 20V, I = 0
CB E
Output Capacitance C 8 pF
obo
f = 100MHz
V = 20V, I = 10mA,
CE C
Transition Frequency f 40 MHz
T
f = 20MHz
Note: 8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%.
2 of 5
ZTX453 June 2018
Diodes Incorporated
www.diodes.com
Document number: DS33265 Rev. 5 - 2