VBE(on) - (Volts) hFE VCE(sat) - (Volts) IC - Collector Current (Amps) VBE(sat) - (Volts) Switching time NPN SILICON PLANAR ZTX449 ZTX449 MEDIUM POWER TRANSISTOR ISSUE 2 MARCH 1994 FEATURES TYPICAL CHARACTERISTICS * 30 Volt V CEO * 1 Amp continuous current tf,tr,td I =I =I /10 B1 B2 C ns 0.8 VCE=10V *P = 1 Watt tot 150 tf IC/IB=10 0.6 C ts B 100 ns E tr 0.4 800 td 600 E-Line 50 0.2 400 TO92 Compatible ts tf tr 200 ABSOLUTE MAXIMUM RATINGS. ts td 0 0 0 PARAMETER SYMBOL VALUE UNIT 0.001 0.01 0.1 1 10 0.01 0.1 1 Collector-Base Voltage V 50 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 30 V CEO VCE(sat) v IC Switching Speeds Emitter-Base Voltage V 5V EBO Peak Pulse Current I 2A CM Continuous Collector Current I 1A C 200 1.8 Power Dissipation at T = 25C P 1W amb tot 1.6 160 Operating and Storage Temperature Range T :T -55 to +200 C 1.4 IC/IB=10 j stg 1.2 VCE=2V ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 120 1.0 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 0.8 80 0.6 Collector-Base V 50 V I =100A, I =0 (BR)CBO C E Breakdown Voltage 0.4 40 0.2 Collector-Emitter V 30 V IC=10mA, I =0 (BR)CEO B Breakdown Voltage 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Emitter-Base V5V I =100A, I =0 (BR)EBO E C IC - Collector Current (Amps) IC - Collector Current (Amps) Breakdown Voltage Collector Cut-Off I 0.1 A V =40V hFE v IC VBE(sat) v IC CBO CB Current 10 A V =40V, T =100C CB amb Single Pulse Test at T =25C amb Emitter Cut-Off Current I 0.1 A V =4V, I =0 10 EBO EB C 1.8 Collector-Emitter V 0.5 V I =1A, I =100mA* CE(sat) C B 1.6 Saturation Voltage 1 V I =2A, I =200mA* C B 1.4 Base-Emitter V 1.25 V I =1A, I =100mA* BE(sat) C B 1 1.2 VCE=2V Saturation Voltage 1.0 D.C. Base-Emitter V 1V IC=1A,V =2V* BE(on) CE 0.8 1s 100ms Turn-on Voltage 10ms 0.6 1.0ms 0.1 Static Forward Current h 70 I =50mA, V =2V* 300s FE C CE 0.4 100s Transfer Ratio 100 300 I =500mA, V =2V* C CE 0.2 80 I =1A, V =2V* C CE 40 I =2A, V =2V* 0.001 0.01 0.1 1 10 C CE 0.01 0.1 1 10 100 Transition Frequency f 150 MHz I =50mA, V =10V T C CE IC - Collector Current (Amps) VCE - Collector Voltage (Volts) f=100MHz BE(on) C Output Capacitance C 15 pF V =10V, f=1MHz V v I Safe Operating Area obo CB *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-174 3-173 VBE(on) - (Volts) hFE VCE(sat) - (Volts) IC - Collector Current (Amps) VBE(sat) - (Volts) Switching time NPN SILICON PLANAR ZTX449 ZTX449 MEDIUM POWER TRANSISTOR ISSUE 2 MARCH 1994 FEATURES TYPICAL CHARACTERISTICS * 30 Volt V CEO * 1 Amp continuous current tf,tr,td I =I =I /10 B1 B2 C ns 0.8 VCE=10V *P = 1 Watt tot 150 tf IC/IB=10 0.6 C ts B 100 ns E tr 0.4 800 td 600 E-Line 50 0.2 400 TO92 Compatible ts tf tr 200 ABSOLUTE MAXIMUM RATINGS. ts td 0 0 0 PARAMETER SYMBOL VALUE UNIT 0.001 0.01 0.1 1 10 0.01 0.1 1 Collector-Base Voltage V 50 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 30 V CEO VCE(sat) v IC Switching Speeds Emitter-Base Voltage V 5V EBO Peak Pulse Current I 2A CM Continuous Collector Current I 1A C 200 1.8 Power Dissipation at T = 25C P 1W amb tot 1.6 160 Operating and Storage Temperature Range T :T -55 to +200 C 1.4 IC/IB=10 j stg 1.2 VCE=2V ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 120 1.0 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 0.8 80 0.6 Collector-Base V 50 V I =100A, I =0 (BR)CBO C E Breakdown Voltage 0.4 40 0.2 Collector-Emitter V 30 V IC=10mA, I =0 (BR)CEO B Breakdown Voltage 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Emitter-Base V5V I =100A, I =0 (BR)EBO E C IC - Collector Current (Amps) IC - Collector Current (Amps) Breakdown Voltage Collector Cut-Off I 0.1 A V =40V hFE v IC VBE(sat) v IC CBO CB Current 10 A V =40V, T =100C CB amb Single Pulse Test at T =25C amb Emitter Cut-Off Current I 0.1 A V =4V, I =0 10 EBO EB C 1.8 Collector-Emitter V 0.5 V I =1A, I =100mA* CE(sat) C B 1.6 Saturation Voltage 1 V I =2A, I =200mA* C B 1.4 Base-Emitter V 1.25 V I =1A, I =100mA* BE(sat) C B 1 1.2 VCE=2V Saturation Voltage 1.0 D.C. Base-Emitter V 1V IC=1A,V =2V* BE(on) CE 0.8 1s 100ms Turn-on Voltage 10ms 0.6 1.0ms 0.1 Static Forward Current h 70 I =50mA, V =2V* 300s FE C CE 0.4 100s Transfer Ratio 100 300 I =500mA, V =2V* C CE 0.2 80 I =1A, V =2V* C CE 40 I =2A, V =2V* 0.001 0.01 0.1 1 10 C CE 0.01 0.1 1 10 100 Transition Frequency f 150 MHz I =50mA, V =10V T C CE IC - Collector Current (Amps) VCE - Collector Voltage (Volts) f=100MHz BE(on) C Output Capacitance C 15 pF V =10V, f=1MHz V v I Safe Operating Area obo CB *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-174 3-173