ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Features Mechanical Data BV > 100V (ZTX453) Case: E-Line CEO I = 2A Peak Pulse Current CM Case Material: Molded Plastic. Green Molding Compound. UL I = 1A High Continuous Current C Flammability Rating 94V-0 P = 1W Power Dissipation D Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish Matte Tin Plated Leads, Solderable per MIL- Halogen and Antimony Free. Green Device (Note 3) STD-202, Method 208 Weight: 159mg (Approximate) C B E Top View E-Line Device Symbol Pin-Out Ordering Information (Note 4) Part Number Compliance Marking Quantity ZTX453 Standard ZTX 453 4000 Bulk ZTX453STZ Standard ZTX 453 2000 Taped Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZTX453 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 120 V V CBO Collector-Emitter Voltage 100 V V CEO Emitter-Base Voltage 5 V V EBO Collector Current I 1 A C Peak Collector Current I 2 A CM Peak Dissipation at T = +25C P 1 W A D Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic (Note 5) Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage 120 V BV I = 100A, I = 0 CBO C B Collector-Emitter Breakdown Voltage BV 100 V I = 10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage 5 V BV I = 100A, I = 0 EBO E C DC Current Gain h 40 200 V = 10V, I = 150mA, V = 10V, I = 1A FE CE C CE C Collector-Emitter Saturation Voltage 0.7 V V I = 150mA, I = 15mA CE(SAT) C B Base-Emitter Saturation Voltage V 1.3 V I = 150mA, I = 15mA BE(SAT) C B Collector-Cutoff Current 0.1 A I V = 100V CBO CB Emitter-Cutoff Current I 0.1 A V = 4V EBO EB Gain Bandwidth Product 150 MHz f V = 10V, I = 50mA, f = 100MHz T CE C Collector-Base Capacitance C 3.0 pF V = 10V, f = 1MHz CBO CB Output Capacitance 15 pF C V = 10V, f = 1MHz OBO CB Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 5 ZTX453 November 2016 Diodes Incorporated www.diodes.com Document number: DS33268 Rev. 3 - 2