ZTX453
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Features Mechanical Data
BV > 100V (ZTX453) Case: E-Line
CEO
I = 2A Peak Pulse Current
CM Case Material: Molded Plastic. Green Molding Compound. UL
I = 1A High Continuous Current
C Flammability Rating 94V-0
P = 1W Power Dissipation
D
Moisture Sensitivity: Level 1 per J-STD-020
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-
Halogen and Antimony Free. Green Device (Note 3)
STD-202, Method 208
Weight: 159mg (Approximate)
C
B
E
Top View
E-Line
Device Symbol
Pin-Out
Ordering Information (Note 4)
Part Number Compliance Marking Quantity
ZTX453 Standard ZTX 453 4000 Bulk
ZTX453STZ Standard ZTX 453 2000 Taped
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
ZTX453
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage 120 V
V
CBO
Collector-Emitter Voltage 100 V
V
CEO
Emitter-Base Voltage 5 V
V
EBO
Collector Current I 1 A
C
Peak Collector Current I 2 A
CM
Peak Dissipation at T = +25C P 1 W
A D
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
ESD Ratings (Note 6)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic (Note 5) Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage 120 V
BV I = 100A, I = 0
CBO C B
Collector-Emitter Breakdown Voltage BV 100 V I = 10mA, I = 0
CEO C B
Emitter-Base Breakdown Voltage 5 V
BV I = 100A, I = 0
EBO E C
DC Current Gain h 40 200 V = 10V, I = 150mA, V = 10V, I = 1A
FE CE C CE C
Collector-Emitter Saturation Voltage 0.7 V
V I = 150mA, I = 15mA
CE(SAT) C B
Base-Emitter Saturation Voltage V 1.3 V I = 150mA, I = 15mA
BE(SAT) C B
Collector-Cutoff Current 0.1 A
I V = 100V
CBO CB
Emitter-Cutoff Current I 0.1 A V = 4V
EBO EB
Gain Bandwidth Product 150 MHz
f V = 10V, I = 50mA, f = 100MHz
T CE C
Collector-Base Capacitance C 3.0 pF V = 10V, f = 1MHz
CBO CB
Output Capacitance 15 pF
C V = 10V, f = 1MHz
OBO CB
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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ZTX453 November 2016
Diodes Incorporated
www.diodes.com
Document number: DS33268 Rev. 3 - 2