VBE - (Volts) hFE - Normalised Gain (%) VCE(sat) - (Volts) IC - Collector Current (Amps) (sat) VBE - (Volts) Switching time ZTX454 Not Recommended for New Design Please Use ZTX455 NPN SILICON PLANAR ZTX454 ZTX454 MEDIUM POWER TRANSISTORS ZTX455 ZTX455 ISSUE 2 MARCH 1994 FEATURES TYPICAL CHARACTERISTICS * 140 Volt V tf CEO ns ts 900 S * 1 Amp continuous current 7 tr tf 0.4 ns *P = 1 Watt tot 500 800 6 ts IB1=IB2=IC/10 V =10V 0.3 400 700 CE 5 C I /I =10 B C B tr 4 E 300 600 td 0.2 3 nS 200 500 E-Line 100 2 0.1 TO92 Compatible 100 400 50 1 td ABSOLUTE MAXIMUM RATINGS. 0 300 0 0 0 0.001 0.01 0.1 1 PARAMETER SYMBOL ZTX454 ZTX455 UNIT 0.01 0.1 1 Collector-Base Voltage V 140 160 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 120 140 V CEO VCE(sat) v IC Typical Switching Speeds Emitter-Base Voltage V 5V EBO Peak Pulse Current I 2A CM Continuous Collector Current I 1A C 100 Power Dissipation at T =25C P 1W amb tot 1.0 IC/IB=10 80 Operating and Storage Temperature Range T :T -55 to +200 C j stg 0.8 V =10V CE 60 ELECTRICAL CHARACTERISTICS (at T = 25C). amb 0.6 PARAMETER SYMBOL ZTX454 ZTX455 UNIT CONDITIONS. 40 MIN. MAX. MIN. MAX. 0.4 20 Collector-Base V 140 160 V I =100A (BR)CBO C Breakdown Voltage 0.2 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 Collector-Emitter V 120 140 V I =10mA* CEO(sus) C IC - Collector Current (Amps) IC - Collector Current (Amps) Sustaining Voltage hFE v IC VBE(sat) v IC Emitter-Base V 55V I =100A (BR)EBO E Breakdown Voltage Single Pulse Test at Tamb=25C 1 Collector Cut-Off I 0.1 A V =140V CBO CB Current 0.1 V =120V A CB 1.2 Emitter Cut-Off I 0.1 0.1 A V =4V EBO EB VCE=10V Current 0.1 1.0 Collector-Emitter V 0.7 0.7 V I =150mA, I =15mA CE(sat) C B Saturation Voltage 1.0 I =200mA, I =20mA D.C. C B 0.8 1s 100ms Static Forward h 100 300 100 300 I =150mA, V =10V* 10ms FE C CE 0.01 1.0ms Current Transfer 30 I =200mA, V =1V* 0.6 100s C CE Ratio 10 10 I =1A, V =10V* C CE ZTX454 0.4 Transition f 100 100 MHz I =50mA, V =10V T C CE 0.0001 0.001 0.01 0.1 1 ZTX455 Frequency f=100MHz 0.001 110 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) Output Capacitance C 15 15 pF V =10V, f=1MHz obo CB VBE(on) v IC Safe Operating Area * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Typical 3-180 3-179 VBE - (Volts) hFE - Normalised Gain (%) VCE(sat) - (Volts) IC - Collector Current (Amps) (sat) VBE - (Volts) Switching time ZTX454 Not Recommended for New Design Please Use ZTX455 NPN SILICON PLANAR ZTX454 ZTX454 MEDIUM POWER TRANSISTORS ZTX455 ZTX455 ISSUE 2 MARCH 1994 FEATURES TYPICAL CHARACTERISTICS * 140 Volt V tf CEO ns ts 900 S * 1 Amp continuous current 7 tr tf 0.4 ns *P = 1 Watt tot 500 800 6 ts IB1=IB2=IC/10 V =10V 0.3 400 700 CE 5 C I /I =10 B C B tr 4 E 300 600 td 0.2 3 nS 200 500 E-Line 100 2 0.1 TO92 Compatible 100 400 50 1 td ABSOLUTE MAXIMUM RATINGS. 0 300 0 0 0 0.001 0.01 0.1 1 PARAMETER SYMBOL ZTX454 ZTX455 UNIT 0.01 0.1 1 Collector-Base Voltage V 140 160 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 120 140 V CEO VCE(sat) v IC Typical Switching Speeds Emitter-Base Voltage V 5V EBO Peak Pulse Current I 2A CM Continuous Collector Current I 1A C 100 Power Dissipation at T =25C P 1W amb tot 1.0 IC/IB=10 80 Operating and Storage Temperature Range T :T -55 to +200 C j stg 0.8 V =10V CE 60 ELECTRICAL CHARACTERISTICS (at T = 25C). amb 0.6 PARAMETER SYMBOL ZTX454 ZTX455 UNIT CONDITIONS. 40 MIN. MAX. MIN. MAX. 0.4 20 Collector-Base V 140 160 V I =100A (BR)CBO C Breakdown Voltage 0.2 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 Collector-Emitter V 120 140 V I =10mA* CEO(sus) C IC - Collector Current (Amps) IC - Collector Current (Amps) Sustaining Voltage hFE v IC VBE(sat) v IC Emitter-Base V 55V I =100A (BR)EBO E Breakdown Voltage Single Pulse Test at Tamb=25C 1 Collector Cut-Off I 0.1 A V =140V CBO CB Current 0.1 V =120V A CB 1.2 Emitter Cut-Off I 0.1 0.1 A V =4V EBO EB VCE=10V Current 0.1 1.0 Collector-Emitter V 0.7 0.7 V I =150mA, I =15mA CE(sat) C B Saturation Voltage 1.0 I =200mA, I =20mA D.C. C B 0.8 1s 100ms Static Forward h 100 300 100 300 I =150mA, V =10V* 10ms FE C CE 0.01 1.0ms Current Transfer 30 I =200mA, V =1V* 0.6 100s C CE Ratio 10 10 I =1A, V =10V* C CE ZTX454 0.4 Transition f 100 100 MHz I =50mA, V =10V T C CE 0.0001 0.001 0.01 0.1 1 ZTX455 Frequency f=100MHz 0.001 110 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) Output Capacitance C 15 15 pF V =10V, f=1MHz obo CB VBE(on) v IC Safe Operating Area * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Typical 3-180 3-179